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Theoretical and Experimental Studies on Lateral Spread of Implanted Ions

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Ion Implantation in Semiconductors and Other Materials

Part of the book series: The IBM Research Symposia Series ((IRSS))

Abstract

Theoretical considerations concerned with lateral spread of implanted ions are briefly discussed by use of 2nd order differential equations derived from the theory of Lindhard et al. And, the lateral spread is observed experimentally by a backscattering technique. The experimental results are in good agreement with the theoretical considerations. It is concluded that the lateral spread of implanted ions can not be neglected.

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References

  1. S. Furukawa, H. Matsumura, and H. Ishiwara, Japan. J. appl. Phys. 11, 134 (1972)

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Author information

Authors and Affiliations

  1. Department of Physical Electronics Faculty of Engineering, Tokyo Institute of Technology, Tokyo, Japan

    Seijiro Furukawa & Hideki Matsumura

Authors
  1. Seijiro Furukawa
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  2. Hideki Matsumura
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Editor information

Editors and Affiliations

  1. IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA

    Billy L. Crowder

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© 1973 Plenum Press, New York

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Furukawa, S., Matsumura, H. (1973). Theoretical and Experimental Studies on Lateral Spread of Implanted Ions. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_17

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  • DOI: https://doi.org/10.1007/978-1-4684-2064-7_17

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-2066-1

  • Online ISBN: 978-1-4684-2064-7

  • eBook Packages: Springer Book Archive

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