Evaluation of the Mobility in a Si-SiO₂ Inversion Layer at T=0 K Using Green’s Function Formalism

Abstract

The transport properties of low-dimensional systems, such as inversion layers, quantum wells, heterostructures and superlattices, have been a focus of scientific research for many years, but more so recently due to the advances in the microfabrication of metallic and semiconductor nanostructures. In these structures, the motion of the electrons in the direction perpendicular to the interface is quantized, and the electronic states are grouped into electronic subbands. In addition to the two-dimensionality, these systems are characterized by the fact that the sheet electron concentration can be changed over a wide range by varying the strength of the electric field applied perpendicular to the surface.