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Evaluation of the Mobility in a Si-SiO2 Inversion Layer at T=0 K Using Green’s Function Formalism

  • D. Vasileska-Kafedziska
  • P. Bordone
  • T. Eldridge
  • D. K. Ferry
Part of the NATO ASI Series book series (NSSB, volume 342)

Abstract

The transport properties of low-dimensional systems, such as inversion layers, quantum wells, heterostructures and superlattices, have been a focus of scientific research for many years, but more so recently due to the advances in the microfabrication of metallic and semiconductor nanostructures. In these structures, the motion of the electrons in the direction perpendicular to the interface is quantized, and the electronic states are grouped into electronic subbands. In addition to the two-dimensionality, these systems are characterized by the fact that the sheet electron concentration can be changed over a wide range by varying the strength of the electric field applied perpendicular to the surface.

Keywords

Inversion Layer Dyson Equation Coulomb Center Sheet Charge Electronic Subbands 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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  4. Vasileska-Kafedziska, D., Bordone, P., and Ferry, D. K., 1994, submitted for publication.Yu-Kuang Hu, B., and Das Sarma, S., 1993, Phys. Rev. B48:5469.ADSCrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media New York 1995

Authors and Affiliations

  • D. Vasileska-Kafedziska
    • 1
  • P. Bordone
    • 1
    • 3
  • T. Eldridge
    • 2
  • D. K. Ferry
    • 1
  1. 1.Center for Solid State Electronics ResearchArizona State UniversityTempeUSA
  2. 2.McDonnell Douglas Helicopter SystemsMesaUSA
  3. 3.Dipartimento di Fisica ed Instituto Nazionale di Fisica della MateriaUniversità di ModenaModenaItaly

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