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Quantum Transport in Ultrasmall Devices

Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17–30, 1994, in II Ciocco, Italy

  • David K. Ferry
  • Harold L. Grubin
  • Carlo Jacoboni
  • Anti-Pekka Jauho

Part of the NATO ASI Series book series (NSSB, volume 342)

Table of contents

  1. Front Matter
    Pages i-x
  2. C. Jacoboni, D. K. Ferry
    Pages 1-39
  3. Christopher M. Snowden
    Pages 41-76
  4. Mark A. Reed, Jeffrey W. Sleight
    Pages 111-132
  5. A. S. Sachrajda, Y. Feng, G. Kirczenow, R. P. Taylor, B. L. Johnson, P. J. Kelly et al.
    Pages 133-140
  6. T. J. Thornton
    Pages 141-169
  7. John R. Barker
    Pages 171-180
  8. Carlo Jacoboni, Paolo Casarini, Alice Ruini
    Pages 181-190
  9. N. A. Bannov, V. V. Mitin, M. A. Stroscio
    Pages 191-200
  10. A. S. Dzurak, M. Field, J. E. F. Frost, I. M. Castleton, C. G. Smith, C. -T. Liang et al.
    Pages 201-216
  11. John R. Barker, Sharif Babiker
    Pages 217-225
  12. L. Eaves, P. H. Beton, A. K. Geim, P. C. Main
    Pages 227-240
  13. H. Haug, K. El Sayed, L. Bányai
    Pages 359-399
  14. T. C. McGill, D. Z.-Y. Ting
    Pages 401-415
  15. J. M. Ryan, J. Allgair, T. Whidden, M. N. Kozicki, D. K. Ferry
    Pages 437-440
  16. Arvydas Matulionis, Carlo Jacoboni
    Pages 453-456
  17. V. L. Gurevich, V. B. Pevzner, K. Hess
    Pages 457-460
  18. G. Edwards, E. C. Valadares, F. W. Sheard, D. K. Ferry
    Pages 461-464
  19. Reinhard Scholz
    Pages 465-468
  20. E.A. de Andrada e Silva, G. C. La Rocca, F. Bassani
    Pages 469-471
  21. Stefan Haas, Fausto Rossi, Tilmann Kuhn
    Pages 473-476
  22. A. Greiner, T. Kuhn, H. Hillmer, S. Hansmann, H. Burkhard
    Pages 481-484
  23. I. Gasser, P. A. Markowich
    Pages 493-496
  24. O. M. Bulashenko, L. L. Bonilla, J. Galán, J. A. Cuesta, F. C. Martínez, J. M. Molera
    Pages 501-504
  25. A. Ecker, S. M. Goodnick, C. Berven, M. N. Wybourne
    Pages 505-508
  26. A. Monakhov, A. Shik
    Pages 509-512
  27. E. Stefãnescu, E. Hãlmãgean, A. Sãndulescu
    Pages 517-520
  28. D. Vasileska-Kafedziska, P. Bordone, T. Eldridge, D. K. Ferry
    Pages 525-528
  29. Back Matter
    Pages 535-544

About this book

Introduction

The operation of semiconductor devices depends upon the use of electrical potential barriers (such as gate depletion) in controlling the carrier densities (electrons and holes) and their transport. Although a successful device design is quite complicated and involves many aspects, the device engineering is mostly to devise a "best" device design by defIning optimal device structures and manipulating impurity profIles to obtain optimal control of the carrier flow through the device. This becomes increasingly diffIcult as the device scale becomes smaller and smaller. Since the introduction of integrated circuits, the number of individual transistors on a single chip has doubled approximately every three years. As the number of devices has grown, the critical dimension of the smallest feature, such as a gate length (which is related to the transport length defIning the channel), has consequently declined. The reduction of this design rule proceeds approximately by a factor of 1. 4 each generation, which means we will be using 0. 1-0. 15 ). lm rules for the 4 Gb chips a decade from now. If we continue this extrapolation, current technology will require 30 nm design rules, and a cell 3 2 size < 10 nm , for a 1Tb memory chip by the year 2020. New problems keep hindering the high-performance requirement. Well-known, but older, problems include hot carrier effects, short-channel effects, etc. A potential problem, which illustrates the need for quantum transport, is caused by impurity fluctuations.

Keywords

Coulomb electrons modeling quantum dot simulation spectroscopy transmission

Editors and affiliations

  • David K. Ferry
    • 1
  • Harold L. Grubin
    • 2
  • Carlo Jacoboni
    • 3
  • Anti-Pekka Jauho
    • 4
  1. 1.Arizona State UniversityTempeUSA
  2. 2.SRA, Inc.GlastonburyUSA
  3. 3.University of ModenaModenaItaly
  4. 4.Technical University of DenmarkLyngbyDenmark

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4615-1967-6
  • Copyright Information Plenum Press, New York 1995
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4613-5809-1
  • Online ISBN 978-1-4615-1967-6
  • Series Print ISSN 0258-1221
  • Buy this book on publisher's site
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