Effects of Band-Structure and Electric Fields on Resonant Tunneling Dynamics

Abstract

Tunneling phenomena in quantum wells and superlattices have been studied extensively for potential applications in quantum devices. Due to the many contemporary resonant tunneling experiments performed on double barrier structures, many analytical analyses and numerical simulations have been focused on such structures (Merzbacher, 1970; Støvneng and Hauge, 1991; Frensley, 1986). Theoretical calculations have affirmed that resonant tunneling occurs for the free electron in the double barrier structure (Merzbacher, 1970), and for the Bloch electron in the one-dimensional nearest neighbor tight binding band with double potential barriers (Støvneng and Hauge, 1991).