Skip to main content
SpringerLink
Log in

Other Epitaxial Oxides on Semiconductors

  • Chapter
  • First Online:
Integration of Functional Oxides with Semiconductors

Abstract

The success of integrating perovskites on Si(001) has also stimulated work on developing growth processes for other oxide materials, other crystallographic orientations, and even other semiconductor substrates. A review of the current work is summarized in this chapter, including efforts at growing the opposite stack of semiconductors on oxide surfaces. Work on the epitaxial integration of oxides on Si(111), Ge, GaAs, GaN, SiC is described. Oxides other than SrTiO3 that have been grown on Si(100) are also reviewed. It is hoped that this short history of the major advances in oxide/semiconductor epitaxy can provide insight into the various substrate preparation and film deposition tricks and techniques that enable such epitaxial systems to be made.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Log in via an institution
Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 84.99
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 109.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. K.J. Hubbard, D.G. Schlom, Thermodynamic stability of binary oxides in contact with silicon. J. Mater. Res. 11, 2757 (1996)

    Google Scholar 

  2. D.K. Fork, F.A. Ponce, J.C. Tramontana, T.H. Geballe, Epitaxial MgO on Si(001) for Y‐Ba‐Cu‐O thin‐film growth by pulsed laser deposition. Appl. Phys. Lett. 58, 2294 (1991)

    Google Scholar 

  3. G.X. Miao et al., Epitaxial growth of MgO and Fe/MgO/Fe magnetic tunnel junctions on (100)-Si by molecular beam epitaxy. Appl. Phys. Lett. 93, 142511 (2008)

    Google Scholar 

  4. C. Wolverton, K.C. Hass, Phase stability and structure of spinel-based transition aluminas. Phys. Rev. B 63, 024102 (2000)

    Google Scholar 

  5. C. Merckling et al., Pseudomorphic molecular beam epitaxy growth of gamma-Al2O3(001) on Si(001) and evidence for spontaneous lattice reorientation during epitaxy. Appl. Phys. Lett. 89, 232907 (2006)

    Google Scholar 

  6. K. Sawada, M. Ishida, T. Nakamura, N. Ohtake, Metalorganic molecular beam epitaxy of γ‐Al2O3 films on Si at low growth temperatures. Appl. Phys. Lett. 52, 1672 (1988)

    Google Scholar 

  7. C. Merckling et al., Growth of crystalline γ‐Al2O3 on Si by molecular beam epitaxy: influence of the substrate orientation. J. Appl. Phys. 102, 024101 (2007)

    Google Scholar 

  8. D. Akai, K. Hirabayashi, M. Yokawa, K. Sawada, M. Ishida, Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al2O3(001) buffer layer. J. Cryst. Growth 264, 463 (2004)

    Google Scholar 

  9. Y.-C. Jung, H. Miura, K. Ohtani, M. Ishida, High-quality silicon/insulator heteroepitaxial structures formed by molecular beam epitaxy using Al2O3 and Si. J. Cryst. Growth 196, 88 (1999)

    Google Scholar 

  10. L. Wang et al., Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer. Appl. Phys. Lett. 72, 109 (1998)

    Google Scholar 

  11. D.K. Fork, D.B. Fenner, G.A.N. Connell, J.M. Phillips, T.H. Geballe, Epitaxial yttria‐stabilized zirconia on hydrogen‐terminated Si by pulsed laser deposition. Appl. Phys. Lett. 57, 1137 (1990)

    Google Scholar 

  12. S.J. Wang, C.K. Ong, L.P. You, S.Y. Xu, Epitaxial growth of yttria-stabilized zirconia oxide thin film on natively oxidized silicon wafer without an amorphous layer. Semicond. Sci. Tech. 15, 836 (2000)

    Google Scholar 

  13. S.J. Wang et al., Crystalline zirconia oxide on silicon as alternative gate dielectrics. Appl. Phys. Lett. 78, 1604 (2001)

    Google Scholar 

  14. M. Ihara et al., Vapor phase epitaxial growth of MgO-Al2O3. J. Electrochem. Soc. 129, 2569 (1982)

    Google Scholar 

  15. S. Miura et al., Epitaxial Y‐Ba‐Cu‐O films on Si with intermediate layer by rf magnetron sputtering. Appl. Phys. Lett. 53, 1967 (1988)

    Google Scholar 

  16. D.M. Hwang et al., Epitaxial relations between in situ superconducting YBa2Cu3O7-x thin films and BaTiO3/MgAl2O4/Si substrates. J. Appl. Phys. 68, 1772 (1990)

    Google Scholar 

  17. S.A. Chambers, Y. Liang, Z. Yu, R. Droopad, J. Ramdani, Band offset and structure of SrTiO3/Si(001) heterojunctions. J. Vac. Sci. Tech. A 19, 934 (2001)

    Google Scholar 

  18. M. Sousa et al., Optical properties of epitaxial SrHfO3 thin films grown on Si. J. Appl. Phys. 102, 104103 (2007)

    Google Scholar 

  19. R.A. McKee, F.J. Walker, M.F. Chisholm, Crystalline oxides on silicon: the first five monolayers. Phys. Rev. Lett. 81, 3014 (1998)

    Google Scholar 

  20. H. Li et al., Two-dimensional growth of high-quality strontium titanate thin films on Si. J. Appl. Phys. 93, 4521 (2003)

    Google Scholar 

  21. C. Rossel et al., SrHfO3 as gate dielectric for future CMOS technology. Microelectron. Eng. 84, 1869 (2007)

    Google Scholar 

  22. C. Rossel et al., Field-effect transistors with SrHfO3 as gate oxide. Appl. Phys. Lett. 89, 053506 (2006)

    Google Scholar 

  23. T.F. Wietler et al., Epitaxial growth of Gd2O3 on Ge films grown by surfactant-mediated epitaxy on Si(001) substrates. Solid State Electron. 53, 833 (2009)

    Google Scholar 

  24. J. Wang et al., Crystal structure and strain state of molecular beam epitaxial grown Gd2O3 on Si(111) substrates: a diffraction study. Semicond. Sci. Tech. 24, 045021 (2009)

    Google Scholar 

  25. M.E. Hunter, M.J. Reed, N.A. El-Masry, J.C. Roberts, S.M. Bedair, Epitaxial Y2O3 films grown on Si(111) by pulsed-laser ablation. Appl. Phys. Lett. 76, 1935 (2000)

    Google Scholar 

  26. S. Guha, N.A. Bojarczuk, V. Narayanan, Lattice-matched, epitaxial, silicon-insulating lanthanum yttrium oxide heterostructures. Appl. Phys. Lett. 80, 766 (2002)

    Google Scholar 

  27. T. Schroeder et al., Structure and thickness-dependent lattice parameters of ultrathin epitaxial Pr2O3 films on Si(001). Appl. Phys. Lett. 85, 1229 (2004)

    Google Scholar 

  28. H.J. Osten et al., Molecular beam epitaxy of rare-earth oxides, in Rare earth Oxide Thin Films: Growth, Characterization, and Application, ed. by M. Fanciulli, G. Scarel (Springer, Berlin, 2005)

    Google Scholar 

  29. A. Fissel et al., Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon. J. Appl. Phys. 99, 074105 (2006)

    Google Scholar 

  30. D.O. Klenov, L.F. Edge, D.G. Schlom, S. Stemmer, Extended defects in epitaxial Sc2O3 films grown on (111) Si. Appl. Phys. Lett. 86, 051901 (2005)

    Google Scholar 

  31. B.E. Park, S. Shouriki, E. Tokumitsu, H. Ishiwara, Fabrication of PbZrxTi1-xO3 films on Si structures using Y2O3 buffer layers. Jpn. J. Appl. Phys. 37, 5145 (1998)

    Google Scholar 

  32. H.N. Lee, Y.T. Kim, S.H. Choh, Characteristics of Pt/SrBi2Ta2O9/Y2O3/Si ferroelectric gate capacitors. J. Kor. Phys. Soc. 34, 454 (1999)

    Google Scholar 

  33. S. Imada, S. Shouriki, E. Tokumitsu, H. Ishiwara, Epitaxial growth of ferroelectric YMnO3 thin films on Si (111) substrates by molecular beam epitaxy. Jpn. J. Appl. Phys. 37, 6497 (1998)

    Google Scholar 

  34. V. Narayanan, S. Guha, N.A. Bojarczuk, F.R. Ross, Growth and characterization of epitaxial Si/(LaxY1-x)2O3/Si heterostructures. J. Appl. Phys. 93, 251 (2003)

    Google Scholar 

  35. A. Giussani, P. Zaumseil, O. Seifarth, P. Storck, T. Schroeder, A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures. New J. Phys. 12, 093005 (2010)

    Google Scholar 

  36. A. Wilke et al., Complex interface and growth analysis of single crystalline epi-Si(111)/Y2O3/Pr2O3/Si(111) heterostructures: Strain engineering by oxide buffer control. Surf. Interface Anal. 43, 827 (2011)

    Google Scholar 

  37. L. Tarnawska et al., Single crystalline Sc2O3/Y2O3 heterostructures as novel engineered buffer approach for GaN integration on Si (111). J. Appl. Phys. 108, 063502 (2010)

    Google Scholar 

  38. W. Guo et al., Epitaxial ZnO films on (111) Si substrates with Sc2O3 buffer layers. Appl. Phys. Lett. 94, 122107 (2009)

    Google Scholar 

  39. Y.Y. Gomeniuk et al., Interface and bulk properties of high-k gadolinium and neodymium oxides on silicon, in Nanoscaled Semiconductor-on-Insulator Materials, Sensors and Devices, ed. by A.N. Nazarov, J.P. Raskin (TransTech, Zurich, 2011)

    Google Scholar 

  40. J.X. Wang et al., Epitaxial multi-component rare-earth oxide: a high-k material with ultralow mismatch to Si. Mater. Lett. 64, 866 (2010)

    Google Scholar 

  41. A. Laha, E. Bugiel, H.J. Osten, A. Fissel, Crystalline ternary rare earth oxide with capacitance equivalent thickness below 1 nm for high-K application. Appl. Phys. Lett. 88, 172107 (2006)

    Google Scholar 

  42. E.J. Tarsa, J.S. Speck, M. Robinson, Pulsed laser deposition of epitaxial silicon/h-Pr2O3/silicon heterostructures. Appl. Phys. Lett. 63, 539 (1993)

    Google Scholar 

  43. H.J. Osten, J.P. Liu, E. Bugiel, H.J. Mussig, P. Zaumseil, Epitaxial growth of praseodymium oxide on silicon. Mater. Sci. Eng. B 87, 297 (2001)

    Google Scholar 

  44. M. Yoshimoto et al., Room-temperature epitaxial growth of CeO2 thin films on Si(111) substrates for fabrication of sharp oxide/silicon interface. Jpn. J. Appl. Phys. 34, L668 (1995)

    Google Scholar 

  45. H. Koinuma, H. Nagata, T. Tsukahara, S. Gonda, M. Yoshimoto, Ceramic layer epitaxy by pulsed laser deposition in an ultrahigh vacuum system. Appl. Phys. Lett. 58, 2027 (1991)

    Google Scholar 

  46. D.K. Fork, D.B. Fenner, T.H. Geballe, Growth of epitaxial PrO2 thin films on hydrogen-terminated Si(111) by pulsed laser deposition. J. Appl. Phys. 68, 4316 (1990)

    Google Scholar 

  47. J.W. Seo et al., Interface formation and defect structures in epitaxial La2Zr2O7 thin films on (111) Si. Appl. Phys. Lett. 83, 5211 (2003)

    Google Scholar 

  48. D. Dimos, C.H. Mueller, Annu. Rev. Mater. Sci. 28(1), 397 (1998)

    Google Scholar 

  49. C.-R. Cho, J.-Y. Hwang, J.-P. Kim, S.-Y. Jeong, S.-G. Yoon, W.-J. Lee, Jpn. J. Appl. Phys. 43, L1425 (2004)

    Google Scholar 

  50. M.D. Losego, L. Fitting Kourkoutis, S. Mita, H.S. Craft, D.A. Muller, R. Collazo, Z. Sitar, J.-P. Maria, J. Cryst. Growth 311, 1106 (2009)

    Google Scholar 

  51. A. Posadas, J.-B. Yau, C.H. Ahn, J. Han, S. Gariglio, K. Johnston, K.M. Rabe, J.B. Neaton, Appl. Phys. Lett. 87, 171915 (2005)

    Google Scholar 

  52. A. Posadas, J.-B. Yau, C.H. Ahn, Phys. Status Solidi B 243, 2085 (2006)

    Google Scholar 

  53. Y. Chye, T. Liu, D. Li, K. Lee, D. Lederman, T.H. Myers, Appl. Phys. Lett. 88, 132903 (2006)

    Google Scholar 

  54. N. Sai, J. Lee, C.J. Fennie, A.A. Demkov, Appl. Phys. Lett. 91, 202910 (2007)

    Google Scholar 

  55. P.J. Hansen, V. Vaithyanathan, Y. Wu, T. Mates, S. Heikman, U.K. Mishra, R.A. York, D.G. Schlom, J.S. Speck, J. Vac. Sci. Tech. B 23, 499 (2005)

    Google Scholar 

  56. W. Tian, V. Vaithyanathan, D.G. Schlom, Q. Zhan, S.Y. Yang, Y.H. Chu, R. Ramesh, Appl. Phys. Lett. 90, 172908 (2007)

    Google Scholar 

  57. S.-H. Lee, T.W. Noh, Integr. Ferroelectr. 20, 25 (1998)

    Google Scholar 

  58. Y. Tsuchiya, A. Kobayashi, J. Ohta, H. Fujioka, M. Oshima, Phys. Status Solidi A 202, R145 (2005)

    Google Scholar 

  59. P.J. Hansen, Y. Terao, Y. Wu, R.A. York, U.K. Mishra, J.S. Speck, J. Vac. Sci. Tech. B 23, 162 (2005)

    Google Scholar 

  60. L. Hao, J. Zhu, Y. Liu, S. Wang, H. Zeng, X. Liao, Y. Liu, H. Lei, Y. Zhang, W. Zhang, Y. Li, Thin Solid Films 520, 3035 (2012)

    Google Scholar 

  61. H.S. Craft, J.F. Ihlefeld, M.D. Losego, R. Collazo, Z. Sitar, J.-P. Maria, Appl. Phys. Lett. 88, 212906 (2006)

    Google Scholar 

  62. V.E. Henrich, P.A. Cox, The Surface Science of Metal Oxides (Cambridge University Press, Cambridge, 1994)

    Google Scholar 

  63. E.A. Paisley, T.C. Shelton, S. Mita, R. Collazo, H.M. Christen, Z. Sitar, M.D. Biegalski, J.-P. Maria, Appl. Phys. Lett. 101, 092904 (2012)

    Google Scholar 

  64. E.A. Paisley, M.D. Losego, B.E. Gaddy, J.S. Tweedie, R. Collazo, Z. Sitar, D.L. Irving, J.-P. Maria, Nat. Commun. 2, 461 (2011)

    Google Scholar 

  65. M.D. Losego, S. Mita, R. Collazo, Z. Sitar, J.-P. Maria, J. Cryst. Growth 310, 51 (2008)

    Google Scholar 

  66. A. Schmehl, V. Vaithyanathan, A. Herrnberger, S. Thiel, C. Richter, M. Liberati, T. Heeg, M. Röckerath, L.F. Kourkoutis, S. Mühlbauer, P. Böni, D.A. Muller, Y. Barash, J. Schubert, Y. Idzerda, J. Mannhart, D.G. Schlom, Nat. Mater. 6, 882 (2007)

    Google Scholar 

  67. W.A. Doolittle, A.G. Carver, W. Henderson, J. Vac. Sci. Tech. B 23, 1272 (2005)

    Google Scholar 

  68. J.D. Greenlee, W.L. Calley, W. Henderson, W.A. Doolittle, Phys. Status Solidi C 9, 155 (2012)

    Google Scholar 

  69. T.L. Goodrich, Z. Cai, M.D. Losego, J.-P. Maria, K.S. Ziemer, J. Vac. Sci. Tech. B 25, 1033 (2007)

    Google Scholar 

  70. T.L. Goodrich, J. Parisi, Z. Cai, K.S. Ziemer, Appl. Phys. Lett. 90, 042910 (2007)

    Google Scholar 

  71. A. Posadas, F.J. Walker, C.H. Ahn, T.L. Goodrich, Z. Cai, K.S. Ziemer, Appl. Phys. Lett. 92, 233511 (2008)

    Google Scholar 

  72. T.L. Goodrich, Z. Cai, M.D. Losego, J.-P. Maria, L. Fitting Kourkoutis, D.A. Muller, K.S. Ziemer, J. Vac. Sci. Tech. B 26, 1110 (2008)

    Google Scholar 

  73. Z. Cai, T.L. Goodrich, B. Sun, Z. Chen, V.G. Harris, K.S. Ziemer, J. Phys. D: Appl. Phys. 43, 095002 (2010)

    Google Scholar 

  74. T.L. Goodrich, Z. Cai, K.S. Ziemer, Appl. Surf. Sci. 254, 3191 (2008)

    Google Scholar 

  75. Z. Chen, A. Yang, Z. Cai, K. Ziemer, C. Vittoria, V.G. Harris, IEEE Trans. Magn. 42, 2855 (2006)

    Google Scholar 

  76. Z. Chen, Z. Cai, A. Yang, K.S. Ziemer, C. Vittoria, V.G. Harris, J. Appl. Phys. 103, 07E513 (2008)

    Google Scholar 

  77. Z. Chen, A. Yang, S.D. Yoon, K. Ziemer, C. Vittoria, V.G. Harris, J. Magn. Magn. Mater. 301, 166 (2006)

    Google Scholar 

  78. V.K. Lazarov, P.J. Hasnip, Z. Cai, K. Yoshida, K.S. Ziemer, J. Appl. Phys. 111, 07A515 (2012)

    Google Scholar 

  79. Z. Chen, V.G. Harris, J. Appl. Phys. 112, 081101 (2012)

    Google Scholar 

  80. R.A. McKee, F.J. Walker, M.F. Chisholm, Science 293, 468 (2001)

    Google Scholar 

  81. C. Merckling, G. Saint-Girons, C. Botella, G. Hollinger, M. Heyns, J. Dekoster, M. Caymax, Appl. Phys. Lett. 98, 092901 (2011)

    Google Scholar 

  82. B.R. Lukanov, J.W. Reiner, F.J. Walker, C.H. Ahn, E.I. Altman, Phys. Rev. B 84, 075330 (2011)

    Google Scholar 

  83. D.P. Norton, A. Goyal, J.D. Budai, D.K. Christen, D.M. Kroeger, E.D. Specht, Q. He, B. Saffian, M. Paranthaman, C.E. Klabunde, D.F. Lee, B.C. Sales, F.A. List, Science 274, 755 (1996)

    Google Scholar 

  84. D.P. Norton, J.D. Budai, M.F. Chisholm, Appl. Phys. Lett. 76, 1677 (2000)

    Google Scholar 

  85. M. Patel, K. Kim, M. Ivill, J.D. Budai, D.P. Norton, Thin Solid Films 468, 1 (2004)

    Google Scholar 

  86. G. Hollinger, R. Skheyta-Kabbani, M. Gendry, Phys. Rev. B 49, 11159 (1994)

    Google Scholar 

  87. P.D. Kirchner, J.M. Woodall, J.L. Freeouf, G.D. Pettit, Appl. Phys. Lett. 38, 427 (1981)

    Google Scholar 

  88. K. Nashimoto, D.K. Fork, T.H. Geballe, Appl. Phys. Lett. 60, 1199 (1992)

    Google Scholar 

  89. L.S. Hung, L.R. Zheng, T.N. Blanton, Appl. Phys. Lett. 60, 3129 (1992)

    Google Scholar 

  90. E.J. Tarsa, M. De Graef, D.R. Clarke, A.C. Gossard, J.S. Speck, J. Appl. Phys. 73, 3276 (1993)

    Google Scholar 

  91. Y. Liang, J. Kulik, T.C. Eschrich, R. Droopad, Z. Yu, P. Maniar, Appl. Phys. Lett. 85, 1217 (2004)

    Google Scholar 

  92. R. Contreras-Guerrero, J.P. Veazey, J. Levy, R. Droopad, Appl. Phys. Lett. 102, 012907 (2013)

    Google Scholar 

  93. M. Ivill, M. Patel, K. Kim, H. Bae, S.J. Pearton, D.P. Norton, J.D. Budai, Appl. Phys. Mater. Sci. Process. 75, 699 (2002)

    Google Scholar 

  94. E. Vasco, L. Vázquez, M. Aguiló, C. Zaldo, J. Cryst. Growth 209, 883 (2000)

    Google Scholar 

  95. E. Vasco, C. Polop, C. Coya, A. Kling, C. Zaldo, Appl. Surf. Sci. 208–209, 512 (2003)

    Google Scholar 

  96. K. Eisenbeiser, R. Emrick, R. Droopad, Z. Yu, J. Finder, S. Rockwell, J. Holmes, C. Overgaard, W. Ooms, IEEE Electron. Dev. Lett. 23, 300 (2002)

    Google Scholar 

  97. A.A. Demkov, H. Seo, X. Zhang, J. Ramdani, Appl. Phys. Lett. 100, 071602 (2012)

    Google Scholar 

  98. L. Largeau, J. Cheng, P. Regreny, G. Patriarche, A. Benamrouche, Y. Robach, M. Gendry, G. Hollinger, G. Saint-Girons, Crystal orientation of GaAs islands grown on SrTiO3(001) by molecular beam epitaxy. Appl. Phys. Lett. 95, 011907 (2009)

    Google Scholar 

  99. J. Cheng, A. Chettaoui, J. Penuelas, B. Gobaut, P. Regreny, A. Benamrouche, Y. Robach, G. Hollinger, G. Saint-Girons, Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3(001). J. Appl. Phys. 107, 094902 (2010)

    Google Scholar 

  100. A. Fissel, D. Kühne, E. Bugiel, H.J. Osten, Appl. Phys. Lett. 88, 153105 (2006)

    Google Scholar 

  101. R. Dargis, A. Fissel, D. Schwendt, E. Bugiel, J. Krügener, T. Wietler, A. Laha, H.J. Osten, Vacuum 85, 523 (2010)

    Google Scholar 

  102. R. Dargis, E. Arkun, A. Clark, R. Roucka, R. Smith, D. Williams, M. Lebby, A.A. Demkov, J. Vac. Sci. Tech. B 30, 02B110 (2012)

    Google Scholar 

  103. A. Laha, E. Bugiel, R. Dargis, D. Schwendt, M. Badylevich, V.V. Afanas’ev, A. Stesmans, A. Fissel, H.J. Osten, Microelectron. J. 40, 633 (2009)

    Google Scholar 

  104. A. Laha, E. Bugiel, A. Fissel, H.J. Osten, Microelectron. Eng. 85, 2350 (2008)

    Google Scholar 

  105. R. Dargis, A. Clark, E. Arkun, R. Roucka, D. Williams, R. Smith, M. Lebby, ECS J. Solid. State. Sci. Tech. 1, P246 (2012)

    Google Scholar 

  106. J. Cheng, P. Regreny, L. Largeau, G. Patriarche, O. Mauguin, K. Naji, G. Hollinger, G. Saint-Girons, Influence of the surface reconstruction on the growth of InP on SrTiO3(001). J. Cryst. Growth 311, 1042 (2009)

    Google Scholar 

  107. K. Johnston, M.R. Castell, A.T. Paxton, M.W. Finnis, Phys. Rev. B 70, 085415 (2004)

    Google Scholar 

  108. J. Cheng, T. Aviles, A. El-Akra, C. Bru-Chevallier, L. Largeau, G. Patriarche, P. Regreny, A. Benamrouche, Y. Robach, G. Hollinger, G. Saint-Girons, Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3/Si(001). Appl. Phys. Lett. 95, 232116 (2009)

    Google Scholar 

  109. G. Saint-Girons, C. Priester, P. Regreny, G. Patriarche, L. Largeau, V. Favre-Nicolin, G. Xu, Y. Robach, M. Gendry, G. Hollinger, Spontaneous compliance of the InP/SrTiO3 heterointerface. Appl. Phys. Lett. 92, 241907 (2008)

    Google Scholar 

  110. B. Gobaut, J. Penuelas, J. Cheng, A. Chettaoui, L. Largeau, G. Hollinger, G. Saint-Girons, Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO3/Si templates. Appl. Phys. Lett. 97, 201908 (2010)

    Google Scholar 

  111. M. El Kazzi, B. Gobaut, J. Penuelas, G. Grenet, M.G. Silly, F. Sirotti, G. Saint-Girons, Ge/SrTiO3(001) interface probed by soft x-ray synchrotron-radiation time-resolved photoemission. Phys. Rev. B 85, 075317 (2012)

    Google Scholar 

  112. B. Gobaut, J. Penuelas, G. Grenet, D. Ferrah, A. Benamrouche, A. Chettaoui, Y. Robach, C. Botella, M. El Kazzi, M.G. Silly, F. Sirotti, G. Saint-Girons, Ge/SrTiO3(001): correlation between interface chemistry and crystallographic orientation. J. Appl. Phys. 112, 093508 (2012)

    Google Scholar 

  113. J.W. Seo, C. Dieker, A. Tapponnier, C. Marchiori, M. Sousa, J.-P. Locquet, J. Fompeyrine, A. Ispas, C. Rossel, Y. Panayiotatos, A. Sotiropoulos, A. Dimoulas, Microelectron. Eng. 84, 2328 (2007)

    Google Scholar 

  114. G. Saint-Girons, P. Regreny, L. Largeau, G. Patriarche, G. Hollinger, Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers. Appl. Phys. Lett. 91, 241912 (2007)

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Physics, The University of Texas at Austin, Austin, TX, USA

    Alexander A. Demkov & Agham B. Posadas

Authors
  1. Alexander A. Demkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Agham B. Posadas
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

Copyright information

© 2014 The Author(s)

About this chapter

Cite this chapter

Demkov, A.A., Posadas, A.B. (2014). Other Epitaxial Oxides on Semiconductors. In: Integration of Functional Oxides with Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-9320-4_8

Download citation

  • DOI: https://doi.org/10.1007/978-1-4614-9320-4_8

  • Published:

  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4614-9319-8

  • Online ISBN: 978-1-4614-9320-4

  • eBook Packages: EngineeringEngineering (R0)

Publish with us

Policies and ethics

Search

Navigation