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Integration of Functional Oxides on SrTiO3/Si Pseudo-Substrates

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Integration of Functional Oxides with Semiconductors

Abstract

In this chapter, we review selected key developments in the integration of functional complex oxides on silicon by means of an MBE-grown epitaxial SrTiO3 buffer. Materials that are high-k dielectric, ferroelectric, ferromagnetic, photocatalytic, and multiferroic have been integrated on silicon. The properties exhibited by these materials are similar in quality to bulk, showing the high degree of crystallinity and robustness of the STO/Si pseudo-substrate even under somewhat high temperatures and oxygen pressures needed to grow some of these materials. We focus on molecular beam epitaxial (MBE) growth and very briefly mention some recent work involving atomic layer deposition (ALD). Detailed discussion of the integration of anatase TiO2, strained LaCoO3, Co-doped SrTiO3, BaTiO3, LaAlO3, and BiFeO3 are included.

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  1. Department of Physics, The University of Texas at Austin, Austin, TX, USA

    Alexander A. Demkov & Agham B. Posadas

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Demkov, A.A., Posadas, A.B. (2014). Integration of Functional Oxides on SrTiO3/Si Pseudo-Substrates. In: Integration of Functional Oxides with Semiconductors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-9320-4_7

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