Simulation of BTI-Related Time-Dependent Variability in CMOS Circuits

  • Javier Martin-Martinez
  • Rosana Rodriguez
  • Montse Nafria
Chapter

Abstract

The correct evaluation of BTI impact on the circuit performance and reliability is a major concern in current technologies. Since BTI in ultrascaled devices is a stochastic mechanism and aging must be evaluated under the actual operation conditions of devices in the circuit, SPICE and Monte Carlo simulations are customary combined with this purpose. The key point in these simulations is the correct description of the BTI effects in the device and their inclusion in circuit simulators. In this subchapter, the different adopted approaches are presented, pointing out their pros and cons, and illustrated with examples of BTI effects on several analog and digital circuits.

Keywords

Expense 

Notes

Acknowledgments

This work was partially supported by the Spanish MINECO (TEC2010-16126) and by the Generalitat de Catalunya (2009 SGR-783).

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Copyright information

© Springer Science+Business Media New York 2014

Authors and Affiliations

  • Javier Martin-Martinez
    • 1
  • Rosana Rodriguez
    • 1
  • Montse Nafria
    • 1
  1. 1.Dept. Enginyeria ElectrònicaUniversitat Autònoma de Barcelona (UAB)BellaterraSpain

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