Abstract
In this chapter, a review of uniaxial s-Si MOSFET physics, modeling issues and approaches has been done. The semi analytical model developed in this chapter shows an increase of electron mobility with the applied uniaxial strain at a given electrical field.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Notes
- 1.
The text/figures/equations/references etc. associated with [215] have been republished/reorganized from the paper [215] Amit Chaudhry, Sonu Sangwan and Jatindra Nath Roy, “Modeling of Some Electrical Parameters of a MOSFET under Uniaxial Stress”, Journal of Computational Electronics, Vol.10, No.4, pp. 437–442, 2011 with due permission from the publisher.
- 2.
The text/figures/equations/references etc. associated with [221] have been republished from the paper [221] Amit Chaudhry, Sonu Sangwan and Jatindra Nath Roy, “Mobility Modeling in a p-MOSFET Under Uniaxial Stress”, Elektrotehniski Vestnik, Vol. 78, No. 5, pp. 298–303,2011 with due permission from the publisher.
- 3.
The text/figures/equations/references etc. associated with [225] have been republished/reorganized from the paper [225] Amit Chaudhry, Sonu Sangwan and Jatindra Nath Roy, “Threshold Voltage and Drain Current Modeling of Uniaxial Strained p-MOSFETs”, Journal of Nano and Electronic Physics, Vol.3, No.4, pp. 27–31, 2011.with due permission from the publisher.
References
Chaudhry A, Roy JN, Joshi G (2010) Nanoscale strained- Si MOSFET physics and modeling approaches: a review. J Semiconduct 31(10):400-1–400-6
Kastalsky AA, Shur MS (1981) Conductance of small semiconductor devices. Solid-State Commun 39(6):715–718
Tsai M-N et al (2006) Temperature effects of n-MOSFET devices with uniaxial mechanical strains. Electrochem Solid-St 9(8):276–278
Ungersboeck E (2006) Electron inversion layer mobility enhancement by uniaxial stress on (001) and (110) oriented MOSFETs, Proceedings of SISPAD, pp 43–46
Koganemaru M et al (2010) Experimental study of uniaxial-stress effects on DC characteristics of nMOSFETs. IEEE T Compon Pack T 33(2):278–286
Tan Y et al (2008) Analytical electron-mobility model for arbitrarily stressed silicon. IEEE T Electron Dev 55(6):1386–1390
Ken Shimizu, Toshiro Hiramoto (2007) Mobility enhancement in uniaxially strained (110) oriented ultra-thin body single- and double-gate MOSFETs with SOI thickness of less than 4 nm, International Electron Devices Meeting (IEDM), USA, pp 715–718
Zhao W, He J, Belford RE, Wernersson L-E, Seabaugh A (2004) Partially depleted SOI MOSFETs under uniaxial tensile strain. IEEE T Electron Dev 51(3):317–323
Lauer I, Antoniadis DA (2005) Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain. IEEE Electron Devic Lett 26(5):314–316
Dhar S et al (2007) Electron mobility model for 110 stressed silicon including strain-dependent mass. IEEE T Nanotechnology 6(1):97–100
Chaudhry A, Sangwan S, Roy JN (2011) Modeling of some electrical parameters of a MOSFET under uniaxial stress. J Comput Electron 10(4):437–442
Lim JS et al (2004) Comparison of threshold-voltage shifts for uniaxial and biaxial tensile -stressed n–MOSFETs. IEEE Electron Devic Lett 25(11):731–733
Shifren L et al (2004) Drive current enhancement in p-type metal –oxide –semiconductor field effect transistors under shear uniaxial stress. Appl Phys Lett 85(25):6188–6190
Uchida et al (2005) Performance enhancement of p MOSFETs depending on strain, channel direction and material, Proceedings of international conference on Simulation of Semiconductor Processes and Devices, (SISPAD), pp 315–318
Shuo Z et al (2006) Impacts of additive strain on hole mobility in bulk Si and strained –Si p-MOSFETs. J Semicoduct 30(10):1–6
Gaubert P, Teramoto A, Ohmi T (2010) Modeling of the hole mobility in p- channel MOS transistors fabricated on (110) oriented Si wafers. Solid State Electron 54:420–426
Chaudhry A, Sangwan S, Roy JN (2011) Mobility modeling in a p-MOSFET under uniaxial stress. Elektrotehniski Vestn 78(5):298–303
Belford Rona E, Wei Zhao, Potashnik J, Qingmin Liu, Alan Seabaugh (2002) Performance-augmented CMOS using back-end uniaxial strain Device Research Conference, pp 41–42
Wacker N, Richter H, Hassan M-U, Rempp H, Burghartz JN (2011) Compact modeling of CMOS transistors under variable uniaxial stress. Solid State Electron 57(1):52–60
Bufler FM, Tsibizov A, Erlebach A (2006) Scaling of bulk pMOSFETs: (110) surface orientation versus uniaxial compressive stress. IEEE Electron Devic Lett 27(12):992–994
Chaudhry A, Sangwan S, Roy JN (2011) Threshold voltage and drain current modeling of uniaxial strained p-MOSFETs. J Nano Electron P 3(4):27–31
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 2013 Springer Science+Business Media New York
About this chapter
Cite this chapter
Chaudhry, A. (2013). Uniaxial s-Si Technology. In: Fundamentals of Nanoscaled Field Effect Transistors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-6822-6_7
Download citation
DOI: https://doi.org/10.1007/978-1-4614-6822-6_7
Published:
Publisher Name: Springer, New York, NY
Print ISBN: 978-1-4614-6821-9
Online ISBN: 978-1-4614-6822-6
eBook Packages: EngineeringEngineering (R0)