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Biaxial s-Si Technology

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Fundamentals of Nanoscaled Field Effect Transistors

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Abstract

Biaxial s-Si technology is perceived to be the alternate for the conventional MOS technology at the nanoscale. This is due to the enhanced performance of the biaxial s-Si technology. This chapter gives the review of biaxial s-Si technology. Some of the existing biaxial structures have been reviewed here. The main structures under biaxial category are relaxed SiGe, graded SiGe, SSOI, SGOI and other various hetero-structures help in providing improved performance. Some case studies of analytical modeling of carrier mobility and other relevant parameters are also given in this chapter.

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Notes

  1. 1.

    The text/figures/equations/references etc. have been republished/reorganized from the paper [135], Amit Chaudhry, J.N. Roy and Garima Joshi, “Nanoscale Strained- Si MOSFET Physics and Modeling Approaches: A Review”, Journal of Semiconductors, Vol.31, No.10, pp.400-1–400-6, 2010 with due permission from the publisher.

  2. 2.

    The text/figures/equations/references etc. have been republished/reorganized from the paper [137], Amit Chaudhry, Garima Joshi, J.N. Roy and D.N. Singh, “Strained Silicon MOSFET Structures for Nanoscale Applications: A Review”, Acta Technica Napocensis - Electronică şi Telecomunicaţii, Vol.51, No.3, 2010, pp.15–22 with due permission from the publisher.

  3. 3.

    The text/figures/equations/references etc. associated with [156] have been reorganized/republished from the paper [156] Amit Chaudhry, S. Sangwan and Jatindra Nath Roy, “Mobility Models for Unstrained and Strained Silicon MOSFETs: A Review”, Contemporary Engineering Sciences, Vol. 4, No. 5, pp.229–247, 2011 with due permission from the publisher.

  4. 4.

    The text/figures/equations/references etc. associated with [194] have been republished/reorganized from the paper [194] Amit Chaudhry, J.N. Roy and S. Sangwan, “A SPICE Compatible Analytical Electron Mobility Model for Biaxial Strained-Si-MOSFETs”, Journal of Semiconductors, Vol. 32, No. 5, pp.1–6, 2011 with due permission from the publisher.

  5. 5.

    The text/figures/equations/references etc. associated with [197] have been republished/reorganized from the paper [197]Amit Chaudhry, S. Sangwan and Jatindra Nath Roy, “Analytical Modeling of Threshold Voltage for a Biaxial Strained-Si-MOSFET”, Contemporary Engineering Sciences, Vol. 4, No. 6, pp.249–258, 2011 with due permission from the publisher

  6. 6.

    The equations, figures etc. associated with [206] have been republished/reorganized from the paper [206], Amit Chaudhry and Sonu Sangwan, “An Analytical Hole Mobility Model for Biaxial Strained-Si-p-MOSFET”, Journal of Computational and Theoretical Nanoscience, Vol. 10, No.5, pp.1–6, 2013 with due permission from the publisher.

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  1. University Institute of Engineering and Technology Punjab University, Chandigarh, India

    Amit Chaudhry

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Chaudhry, A. (2013). Biaxial s-Si Technology. In: Fundamentals of Nanoscaled Field Effect Transistors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-6822-6_6

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  • DOI: https://doi.org/10.1007/978-1-4614-6822-6_6

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