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Germanium Technology

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Fundamentals of Nanoscaled Field Effect Transistors

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Abstract

As the technology is progressing towards nanoscale, the limitations of Si are becoming prominent. So, there is an urgent need to search the alternate materials for the substrate such as Ge which can perform better than Si mainly in the area of enhanced carrier mobility. In this chapter, a review of Ge technology has been done keeping in view the advantages and disadvantages posed by this material. The performance of Ge MOSFETs in the presence of QMEs has also been discussed and some Ge-MOSFET structures with alternate dielectrics have also been studied.

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Notes

  1. 1.

    The text/figures/equations/references, etc., associated with [124] have been republished/reorganized from the paper [124] Amit Chaudhry and J.N. Roy, “Analytical Modeling of Quantum Mechanical Tunneling in Germanium nano-MOSFETs”, Journal of Electronic Science and Technology, Vol.8, No.2, pp.144–148, 2010, with due permission from the publisher.

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Authors and Affiliations

  1. University Institute of Engineering and Technology Punjab University, Chandigarh, India

    Amit Chaudhry

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  1. Amit Chaudhry
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Chaudhry, A. (2013). Germanium Technology. In: Fundamentals of Nanoscaled Field Effect Transistors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-6822-6_5

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  • DOI: https://doi.org/10.1007/978-1-4614-6822-6_5

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  • Print ISBN: 978-1-4614-6821-9

  • Online ISBN: 978-1-4614-6822-6

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