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Nanoscale Effects: Gate Oxide Leakage Currents

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Fundamentals of Nanoscaled Field Effect Transistors

Abstract

In this chapter, a review of gate oxide scaling problems, physics, and models in MOSFETs has been done. The modeling approach to gate tunneling used in several industry-standard compact MOS models has been presented. Some special cases of gate oxide tunneling have also been considered in this chapter.

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Notes

  1. 1.

    The text/figures/equations/references, etc., associated with [48] have been republished/reorganized from the paper [48], Amit Chaudhry and Jatindra Nath Roy, “Analytical Modeling of Gate Oxide leakage Tunneling Current in a MOSFET: A Quantum Mechanical Study”, Micro-nano-electronic Technology, Vol. 48, No. 6, pp.357–364, June, 2011 with due permission from the publisher.

  2. 2.

    The text/figures/equations/references, etc., associated with [53] have been republished/reorganized from the paper [53] Amit Chaudhry and Jatinder Nath Roy, “Gate Oxide Leakage in Poly-depleted Nanoscale-MOSFET: A Quantum Mechanical Study”, International Journal of Nanoelectronics and Materials, Vol. 4, No. 2, pp.93–100, 2011 with due permission from the publisher.

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Authors and Affiliations

  1. University Institute of Engineering and Technology Punjab University, Chandigarh, India

    Amit Chaudhry

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  1. Amit Chaudhry
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Chaudhry, A. (2013). Nanoscale Effects: Gate Oxide Leakage Currents. In: Fundamentals of Nanoscaled Field Effect Transistors. Springer, New York, NY. https://doi.org/10.1007/978-1-4614-6822-6_2

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  • DOI: https://doi.org/10.1007/978-1-4614-6822-6_2

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  • Publisher Name: Springer, New York, NY

  • Print ISBN: 978-1-4614-6821-9

  • Online ISBN: 978-1-4614-6822-6

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