Abstract
In this chapter, the basic simulation techniques for advanced MOS device development will be described. First of all, the basic device physics of MOSFET is presented. The discussion will be in very simple terms, although sufficient to allow the process engineers to understand the basic characteristics of MOSFETS and their significance. The techniques of generating the device parameters are then presented. Also to be discussed are the short channel effects such as drain-induced barrier lowering. Simulations are used to reveal details of these phenomena. The relationship between process parameters and device characteristics are discussed. Simulated results are compared with experimental results. The SUPREM, GEMINI and PISCES programs are used for simulating the device characteristics.
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© 1988 Kluwer Academic Publishers, Boston
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Cham, K.M., Oh, SY., Moll, J.L., Lee, K., Vande Voorde, P., Chin, D. (1988). Simulation Techniques for Advanced Device Development. In: Computer-Aided Design and VLSI Device Development. The Kluwer International Series in Engineering and Computer Science, vol 53. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1695-4_8
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DOI: https://doi.org/10.1007/978-1-4613-1695-4_8
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