Abstract
Historically, numerical simulations of the MOS device have been used first to understand the device operation in the subthreshold and saturation regions. In 1969, Barron [1.1] from Stanford University simulated a MOSFET transistor using a finite-difference method to study the subthreshold conduction and saturation mechanism. Vandorpe [1.2] also simulated and modeled the saturation region with the finite-difference program in 1972. After the self-aligned silicon gate technology was invented, MOSFET device dimensions were reduced. This reduction prompted more numerical simulations to study the short-channel and narrow-width effects. Mock and Kennedy [1.3] from IBM developed a finite-difference program. Hatchel [1.4] also from IBM developed the first finite-element device simulation program. Barnes [1.5] from University of Michigan also developed a finite-element device simulation program for GaAs MESFETs. Most of the programs mentioned above were developed as research tools rather than as design tools for the general users. More emphasis had been put on the development of a stable and fast algorithm and the implementations of the physical mechanisms rather than on the user interface.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
M. B. Barron, “Computer Aided Analysis of IGFET Transistor,” TR No.5501–1, Stanford Electronics Laboratories, Stanford University, Stanford, CA, Nov 1969.
D. Vandorpe and J. Borel, “An Accurate Two-Dimensional Numerical Analysis of the MOS Transistor,” Solid State-Electronics, 15, 1972, pp 547–557.
M. S. Mock, “A Two-Dimensional Mathematical Method of IGFET Transistors,” Solid-State Electronics, 16, 1973, pp. 601–609.
G. D. Hatchel et al, “A Graphical Study of the Current Distribution in Short-Channel IGFETs,” ISSCC Conf. Digest, Philadelphia, pp. 110–111, 1974.
J. J. Barnes and R. J. Lomax, “Two-Dimensional Finite Element Simulation of Semiconductor Devices,” Electron. Lett., 10, 8 Aug 1974, pp. 341–343.
P. E. Cottrell and E. M. Buturla, “Steady-state Analysis of Field Effect Transistors via the Finite Element Method,” IEDM Tech. Digest, Dec 1975, pp. 51–54.
T. Toyabe, K. Yamaguchi, S. Asai, and M. S. Mock, “A Numerical Model of Avalanche Breakdown in MOSFETs,” IEEE Trans, on Electron Devices, ED-25, July 1978, pp. 825–831.
J. A. Greenfield, S. E. Hansen, and R. W. Dutton, “Two-Dimensional Analysis for Device Modeling,” TR No. G201–7, Stanford Electronics Laboratories, Stanford University, Stanford, Calif., 1980.
S. Selberherr, W. Fichtner and H. W. Potzl, “Minimos — A Program Package to Facilitate MOS Device Design and Analysis,” Proc. of NASECODE I Conf. June, 1979, pp. 275–279,
M. S. Mock, “A Time-Dependent Numerical Model of the Insulated-Gate Field-Effect Transistor,” Solid-State Electronics 24, pp. 959–966, 1981.
M. R. Pinto et al, “Computer-Aids for Analysis and Scaling of Extrinsic Devices,” IEDM Tech. Digest, Dec 1984, pp. 288–291.
B. E. Deal and A. S. Grove, J. Appl Physics., 36, 1965, p. 377
D. A. Antoniadis, S. E. Hansen, and R. W. Dutton, “SUPREM II - A Program for IC Process Modeling and Simulation,” TR No. 5019–2, Stanford Electronics Laboratories, Stanford University, Stanford, Calif., 1978.
H. G. Lee, “Two-Dimensional Impurity Diffusion Studies: Process Models and Test Structures for Low-Concentration Boron Diffusion,” TR No. G201–8, Stanford Electronics Laboratories, Stanford University, Stanford, Calif., Aug 1980.
D. Chin, M. Kump, and R. W. Dutton, SUPRA: Stanford University Process Analysis Program,’ Stanford Electronics Laboratories, Stanford University, Stanford, Calif., Oct 1979.
E. Khalily, “Transistor Electrical Characterization and Analysis Program,” Hewlett-Packard Journal, Vol. 32, No. 6, June 1981.
Soo-Young Oh, “MOS Device and Process Design Using Computer Simulations,” Hewlett-Packard Journal, Vol. 33, No. 10, Oct 1982.
L. K. Scheffer, R. I. Dowell, and R. M. Apte, “Design and Simulation of VLSI Circuits,” Hewlett-Packard Journal, Vol. 32, No. 6, June 1981.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1988 Kluwer Academic Publishers, Boston
About this chapter
Cite this chapter
Cham, K.M., Oh, SY., Moll, J.L., Lee, K., Vande Voorde, P., Chin, D. (1988). Numerical Simulation Systems. In: Computer-Aided Design and VLSI Device Development. The Kluwer International Series in Engineering and Computer Science, vol 53. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1695-4_2
Download citation
DOI: https://doi.org/10.1007/978-1-4613-1695-4_2
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-8956-2
Online ISBN: 978-1-4613-1695-4
eBook Packages: Springer Book Archive