Abstract
In this chapter, the design of transistors for submicron CMOS technology will be presented. The advantages of, as well as issues involved in CMOS technology will first be discussed. Then the concerns for the design of n- and p-channel MOSFET’s with submicron channel lengths will be discussed. Using simulations, the values of the critical device parameters are determined which will minimize leakage problems in submicron transistors.
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© 1988 Kluwer Academic Publishers, Boston
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Cham, K.M., Oh, SY., Moll, J.L., Lee, K., Vande Voorde, P., Chin, D. (1988). Transistor Design for Submicron CMOS Technology. In: Computer-Aided Design and VLSI Device Development. The Kluwer International Series in Engineering and Computer Science, vol 53. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1695-4_13
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DOI: https://doi.org/10.1007/978-1-4613-1695-4_13
Publisher Name: Springer, Boston, MA
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