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Electronic and Structural Properties and Schottky Barrier Formation of Alkali Metal-Semiconductor Interfaces

  • Chapter
Metallization and Metal-Semiconductor Interfaces

Part of the book series: NATO ASI Series ((NSSB,volume 195))

Abstract

Because it induced an important decrease in the substrate work function, which is important in many technological applications [1-5], the chemisorption of alkali metals on surfaces has been widely studied in the recent past years. From the fundamental approach, these studies are also interesting, because the alkali metal adsorbed on surfaces represents examples of rather simple model of interfaces. The classic picture of alkali metal chemisorption was until recently derived from the Langmuir’s model[6] with an adsorbate ionic at low coverages and atomic or metallic near one monolayer [7]. Unfortunately, these theoretical models, in which the surface is represented as a free electron gas or as a jellium [8], were unable to explain the behavior of cesium and other alkali metals adsorption on substrates such as transition metals [9] which present the particularity to have, near the Fermi level, highly localized Mdz2" surface states with a dangling bond character [10]. Ab-initio calculations taking in account the true electronic structure of the substrate were recently performed on Cs/W(100)

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Authors and Affiliations

  1. Commissariat à l’Energie Atomique, Service de Physique des Atomes et des Surfaces, CEN Saclay, Gif sur Yvette Cedex, 91191, France

    P. Soukiassian

  2. Département de Physique, Université de Paris-Sud, Orsay Cedex, 91405, France

    P. Soukiassian

  3. Stanford Electronics Laboratory, Stanford University, Stanford, California, 94305, USA

    T. Kendelewicz

  4. Department of Physics, Northern Illinois University, DeKalb, 60115, Illinois, USA

    P. Soukiassian

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  1. P. Soukiassian
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Editors and Affiliations

  1. IBM Almaden Research Center, San Jose, California, USA

    Inder P. Batra

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© 1989 Plenum Press, New York

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Soukiassian, P., Kendelewicz, T. (1989). Electronic and Structural Properties and Schottky Barrier Formation of Alkali Metal-Semiconductor Interfaces. In: Batra, I.P. (eds) Metallization and Metal-Semiconductor Interfaces. NATO ASI Series, vol 195. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0795-2_30

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  • DOI: https://doi.org/10.1007/978-1-4613-0795-2_30

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