Electronic and Structural Properties and Schottky Barrier Formation of Alkali Metal-Semiconductor Interfaces

  • P. Soukiassian
  • T. Kendelewicz
Part of the NATO ASI Series book series (NSSB, volume 195)

Abstract

Because it induced an important decrease in the substrate work function, which is important in many technological applications [1-5], the chemisorption of alkali metals on surfaces has been widely studied in the recent past years. From the fundamental approach, these studies are also interesting, because the alkali metal adsorbed on surfaces represents examples of rather simple model of interfaces. The classic picture of alkali metal chemisorption was until recently derived from the Langmuir’s model[6] with an adsorbate ionic at low coverages and atomic or metallic near one monolayer [7]. Unfortunately, these theoretical models, in which the surface is represented as a free electron gas or as a jellium [8], were unable to explain the behavior of cesium and other alkali metals adsorption on substrates such as transition metals [9] which present the particularity to have, near the Fermi level, highly localized Mdz2" surface states with a dangling bond character [10]. Ab-initio calculations taking in account the true electronic structure of the substrate were recently performed on Cs/W(100)

Keywords

Chromate Lithium Chlorine Tungsten GaAs 

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • P. Soukiassian
    • 1
    • 2
    • 4
  • T. Kendelewicz
    • 3
  1. 1.Commissariat à l’Energie Atomique, Service de Physique des Atomes et des SurfacesCEN SaclayGif sur Yvette CedexFrance
  2. 2.Département de PhysiqueUniversité de Paris-SudOrsay CedexFrance
  3. 3.Stanford Electronics LaboratoryStanford UniversityStanfordUSA
  4. 4.Department of PhysicsNorthern Illinois UniversityDeKalbUSA

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