Metallization and Metal-Semiconductor Interfaces

1. Front Matter

   Pages i-xi

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2. Introduction to Metallization and Metal-Semiconductor Interfaces

   1. Introduction to Metallization and Metal-Semiconductor Interfaces

      • Inder P. Batra

      Pages 1-7

3. General Schottky Barrier Mechanisms

   1. Front Matter

      Pages 9-9

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   2. Mechanisms of Barrier Formation in Schottky Contacts

      • Winfried Mönch

      Pages 11-38

   3. The Role of Defects and Metal States at the Metal-Semiconductor Interface

      • R. Ludeke

      Pages 39-54

   4. Metallization, Bonding, and Energetics of Ordered Phases of Al on Si(111)

      • J. S. Nelson, Inder P. Batra

      Pages 55-74

4. Defects at Metal-Semiconductor Contacts

   1. Front Matter

      Pages 75-75

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   2. Factors Influencing Electrical Barriers at Metal-Semiconductor Interfaces: Gold and Antimony on Indium Phosphide and Cadmium Telluride

      • R. H. Williams

      Pages 77-90

   3. Deep Levels and Band Bending at Metal-Semiconductor Interfaces

      • L. J. Brillson, P. Chiaradia

      Pages 91-110

   4. Influence of the Atomic Scale Roughness of a Clean Si Surface on the Interface Formation with Metals

      • C. A. Sébenne

      Pages 111-122

   5. δ-Doping Layers. The Shaping of Barrier Potentials by Planar Doping

      • F. Koch, A. Zrenner

      Pages 123-135

5. Temperature Dependent Metallization Studies

   1. Front Matter

      Pages 137-137

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   2. Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces

      • W. E. Spicer, R. Cao, K. Miyano, C. McCants, T. T. Chiang, C. J. Spindt et al.

      Pages 139-161

   3. Metal-GaAs(110) Interfaces Formed at Low Temperature: From Adsorbate- to Metal-Induced Gap States

      • A. Kahn, K. Stiles, D. Mao, S. F. Horng, K. Young, J. McKinley et al.

      Pages 163-178

   4. Thermal Effects in Silicon-Metal Interface Formation: A Photoemission Study of Si/Gd and Si/Yb

      • L. Braicovich, E. Puppin

      Pages 179-192

6. Silicon-Silicide Interfaces

   1. Front Matter

      Pages 193-193

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   2. Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfaces

      • D. R. Hamann

      Pages 195-214

   3. Calculated Electronic Structures and Schottky Barrier Heights of (111) NiSi2/Si A- and B-Type Interfaces

      • G. P. Das, P. Blöchl, N. E. Christensen, O. K. Andersen

      Pages 215-234

   4. Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes

      • Jürgen H. Werner

      Pages 235-256

7. Band Offsets and Barriers

   1. Front Matter

      Pages 257-257

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This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as­ sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi­ conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com­ plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro­ vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.

• Doping
• Metall
• Semiconductor
• Tunnel diode
• metal
• microscopy
• semiconductors
• spectroscopy

• IBM Almaden Research Center, San Jose, USA

  Inder P. Batra

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