Abstract
Fifty years ago, in 1938, Schottky explained the rectifying behavior of metal-semiconductor contacts (Braun 1874) by a space-charge layer, which is depleted from mobile carriers, on the semiconductor side of the junction. Since then, the microscopic mechanisms determining the barrier heights at such interfaces are under discussion.
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Mönch, W. (1989). Mechanisms of Barrier Formation in Schottky Contacts. In: Batra, I.P. (eds) Metallization and Metal-Semiconductor Interfaces. NATO ASI Series, vol 195. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0795-2_2
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DOI: https://doi.org/10.1007/978-1-4613-0795-2_2
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