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Calculated Electronic Structures and Schottky Barrier Heights of (111) NiSi2/Si A- and B-Type Interfaces

  • G. P. Das
  • P. Blöchl
  • N. E. Christensen
  • O. K. Andersen
Part of the NATO ASI Series book series (NSSB, volume 195)

Abstract

In recent years it has been proved possible to predict the valence-band offsets of lattice-matched semiconductor heterojunctions1,2 to an accuracy of about 0.1 eV using density functional theory in the local approximation (LDA). We have investigated whether, for well-characterised metal-semiconductor interfaces, the Schottky-barrier heights can be calculated with similar accuracy. In this paper we report on our findings.

Keywords

Schottky Barrier Height Atomic Sphere Approximation Induce Charge Density Dipole Approach Supercell Calculation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1989

Authors and Affiliations

  • G. P. Das
    • 1
  • P. Blöchl
    • 1
  • N. E. Christensen
    • 1
  • O. K. Andersen
    • 1
  1. 1.Max-Planck-Institut für FestkörperforschungFederal Republic of Germany

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