Abstract
This chapter presents a model for the dynamic stability of an SRAM cell in the presence of a radiation particle strike. Such models are required since SRAM stability analysis is crucial from an economic viewpoint, given the extensive use of memory in modern processors and SoCs. Static noise margin (SNM)-based stability analysis often results in pessimistic designs because SNM cannot capture the transient behavior of noise events. Therefore, to improve the accuracy of SRAM noise analysis, dynamic stability should be considered. The dynamic model of SRAM stability proposed in this chapter utilizes the double exponential current pulse for modeling a radiation particle strike, and is able to predict (more accurately than the most accurate prior approach) whether a radiation particle strike will result in a state flip in a 6T-SRAM cell (for given values of Q, τα, and τβ). This model enables a designer to quickly (2,000 ×faster than SPICE) and accurately analyze SRAM stability during the design phase.
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Garg, R., Khatri, S.P. (2010). Modeling Dynamic Stability of SRAMs in the Presence of Radiation Particle Strikes. In: Analysis and Design of Resilient VLSI Circuits. Springer, Boston, MA. https://doi.org/10.1007/978-1-4419-0931-2_4
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DOI: https://doi.org/10.1007/978-1-4419-0931-2_4
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