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Photoemission from Quantum Confined Semiconductor Superlattices

  • Kamakhya Prasad Ghatak
  • Sitangshu Bhattacharya
  • Debashis De
Chapter
Part of the Nanostructure Science and Technology book series (NST)

Introduction

In recent years with the advent of MBE, MOCVD, FLL, and other modern fabricational techniques, semiconductors with superlattice structures (SLs), in which alternate layers of two different degenerate materials set up a periodic potential with a periodicity many times the crystal dimensions, resulting in energy minibands, have been experimentally realized [1, 2, 3, 4]. The SL has found wide applications in many new device structures, such as avalanche photodiodes [5], photo detectors [6], transistors [7], light emitters [8], electro-optical modulators [9], etc. Among the III–V SLs, the GaAs/Ga1–xAlxAs SL has been extensively studied, in which the GaAs layers form the quantum wells and Ga1–xAlxAs layers form the potential barriers. The III–V SLs find extensive application in the realization of high speed optoelectronic devices [10]. Additionally, II–VI [11], IV–VI [12], and HgTe/CdTe [13] SLs have also been experimentally realized. The IV–VI SLs exhibit new physical...

Keywords

Electron Concentration Fermi Energy Constituent Material Photocurrent Density Magnetic Quantization 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Springer Science+Business Media, LLC 2009

Authors and Affiliations

  • Kamakhya Prasad Ghatak
    • 1
  • Sitangshu Bhattacharya
    • 2
  • Debashis De
    • 3
  1. 1.Department of Electronic ScienceThe University of CalcuttaKolkataIndia
  2. 2.Nano Scale Device Research LaboratoryCentre for Electronics Design and Technology Indian Institute of ScienceBangalore 560012India
  3. 3.Department of Computer Science and EngineeringWest Bengal University of TechnologySalt Lake City, KolkataIndia

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