Advertisement

Photoemission from Optoelectronic Materials and their Nanostructures

  • Kamakhya Prasad Ghatak
  • Sitangshu Bhattacharya
  • Debashis De

Part of the Nanostructure Science and Technology book series (NST)

Table of contents

  1. Front Matter
    Pages i-xix
  2. Kamakhya Prasad Ghatak, Debashis De, Sitangshu Bhattacharya
    Pages 1-36
  3. Kamakhya Prasad Ghatak, Debashis De, Sitangshu Bhattacharya
    Pages 107-172
  4. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De
    Pages 173-217
  5. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De
    Pages 219-235
  6. Kamakhya Prasad Ghatak, Debashis De, Sitangshu Bhattacharya
    Pages 237-245
  7. Kamakhya Prasad Ghatak, Debashis De, Sitangshu Bhattacharya
    Pages 247-269
  8. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De
    Pages 271-291
  9. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De
    Pages 293-314
  10. Kamakhya Prasad Ghatak, Sitangshu Bhattacharya, Debashis De
    Pages 315-316
  11. Kamakhya Prasad Ghatak, Debashis De, Sitangshu Bhattacharya
    Pages 317-319
  12. Back Matter
    Pages 321-329

About this book

Introduction

Photoemission from Optoelectronic Materials and Their Nanostructures is the first monograph to investigate the photoemission from low-dimensional nonlinear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, bismuth, carbon nanotubes, GaSb, IV-VI, Pb1-xGexTe, graphite, Te, II-V, ZnP2, CdP2 , Bi2Te3, Sb, and IV-VI materials. The investigation leads to a discussion of III-V, II-VI, IV-VI and HgTe/CdTe quantum confined superlattices, and superlattices of optoelectronic materials. Photo-excitation changes the band structure of optoelectronic compounds in fundamental ways, which has been incorporated into the analysis of photoemission from macro- and micro-structures of these materials on the basis of newly formulated electron dispersion laws that control the studies of quantum effect devices in the presence of light. The importance of the measurement of band gap in optoelectronic materials in the presence of external photo-excitation has been discussed from this perspective. This monograph contains 125 open-ended research problems which form an integral part of the text and are useful for graduate courses on modern optoelectronics in addition to aspiring Ph.D.’s and researchers in the fields of materials science, computational and theoretical nano-science and -technology, semiconductor optoelectronics, quantized-structures, semiconductor physics and condensed matter physics.

Keywords

Einstein Ghatak Optoelectronic materials Photoemission Quantum Dots Quantum Wells Quantum Wires Semiconductor Superlattices currentsam nanostructure quantum dot thin film

Authors and affiliations

  • Kamakhya Prasad Ghatak
    • 1
  • Sitangshu Bhattacharya
    • 2
  • Debashis De
    • 3
  1. 1.Kolkata, West BengalIndia
  2. 2.Ctr. Electronics Design & TechnologyIndian Institute of ScienceBangaloreIndia
  3. 3.Dept. Computer Science &West Bengal University of TechnologyKolkataIndia

Bibliographic information

Industry Sectors
Materials & Steel
Automotive
Chemical Manufacturing
Biotechnology
Electronics
Aerospace