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Gate Dielectric Scaling to 2.0—1.0 nm: SiO2 and Silicon Oxynitride

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High Dielectric Constant Materials

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 16))

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Authors
  1. S.-H. Lo
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  2. Y. Taur
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Editor information

Editors and Affiliations

  1. International SEMATECH, 2706 Montopolis Drive, Austin, TX, 78741, USA

    H.R. Huff

  2. Motorola, 3501 Ed Bluestein Boulevard, MD-K10, Austin, TX, 78721, USA

    D.C. Gilmer

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Lo, SH., Taur, Y. (2005). Gate Dielectric Scaling to 2.0—1.0 nm: SiO2 and Silicon Oxynitride. In: Huff, H., Gilmer, D. (eds) High Dielectric Constant Materials. Springer Series in Advanced Microelectronics, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-26462-0_5

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