High Dielectric Constant Materials

VLSI MOSFET Applications

  • H.R. Huff
  • D.C. Gilmer

Part of the Springer Series in Advanced Microelectronics book series (MICROELECTR., volume 16)

Table of contents

  1. Front Matter
    Pages I-XXIV
  2. G.D. Hutcheson
    Pages 1-30
  3. Classical Regime for SiO2

  4. Transition to Silicon Oxynitrides

  5. Transition to High-k Gate Dielectrics

  6. Future Directions for Ultimate Scaling Technology Generations

    1. F.J. Walker, R.A. McKee
      Pages 607-637

About this book


Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.


CMOS Leistungsfeldeffekttransistor Technologie VLSI circuit dielectrics electronic structure field-effect transistor history integrated circuit material metal oxide semiconductur field-effect transistor semiconductor silicon transistor

Editors and affiliations

  • H.R. Huff
    • 1
  • D.C. Gilmer
    • 2
  1. 1.International SEMATECHAustinUSA
  2. 2.MotorolaAustinUSA

Bibliographic information

  • DOI https://doi.org/10.1007/b137574
  • Copyright Information Springer-Verlag Berlin Heidelberg 2005
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Chemistry and Materials Science
  • Print ISBN 978-3-540-21081-8
  • Online ISBN 978-3-540-26462-0
  • Series Print ISSN 1437-0387
  • About this book
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