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SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties

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High Dielectric Constant Materials

Part of the book series: Springer Series in Advanced Microelectronics ((MICROELECTR.,volume 16))

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References

  1. E.A. Irene. In: J.E. Greene (ed.), Critical Reviews in Solid State and Materials Science 14(2), 175 (1988)

    Google Scholar 

  2. E.A. Irene, Phil. Mag. B 55, 131 (1987)

    Google Scholar 

  3. M.M. Attala, E. Tannenbaum and E.J. Scheiber, Bell System Tech. J. 38, 749 (1959)

    Google Scholar 

  4. I. Tamm, Phys. Z. Soviet Union 1, 733 (1932)

    Google Scholar 

  5. W. Schockley, Phys. Rev. 56, 317 (1939)

    Article  Google Scholar 

  6. J.T. Law and C.G.B. Garrett, J. Appl. Phys. 27, 656 (1956)

    Article  Google Scholar 

  7. D.R. Palmer and C.E. Davenbough, Bull. Amer. Phys. Soc. 3, 138 (1958)

    Google Scholar 

  8. C.N. Berglund, IEEE Trans. Electron Dev. ED-1B, 701 (1966)

    Google Scholar 

  9. R. Castagne and A. Vapaille, Surface Sci. 28, 557 (1971)

    Google Scholar 

  10. P.V. Gray and D.M. Brown, Appl. Phys. Lett. 8, 31 (1966)

    Article  Google Scholar 

  11. E.H. Nicollian and J. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley and Sons, New York (1982)

    Google Scholar 

  12. J.R. Ligenza and W.G. Spitzer, J. Phys. Chem. Solids 14, 131 (1960)

    Article  Google Scholar 

  13. B.E. Deal and A.S. Grove, J. Appl. Phys. 36, 3770 (1965)

    Article  Google Scholar 

  14. W.A. Pliskin, IBM J. Res. Dev. 10, 198 (1966)

    Google Scholar 

  15. P.J. Burkhardt and L.V. Gregor, Trans. Metallurgical Soc. AIME 236, 299 (1966)

    Google Scholar 

  16. A.G. Revesz, K.H. Zaininger and R.J. Evans, Appl. Phys. Lett. 8, 57 (1966)

    Article  Google Scholar 

  17. E.A. Irene and Y.J. van der Meulen, J. Electrochem. Soc. 123, 1380 (1976)

    Google Scholar 

  18. E.A. Irene and R. Ghez, J. Electrochem. Soc. 124, 1757 (1977)

    Google Scholar 

  19. W.A. Pliskin and R.P. Gnall, J. Electrochem. Soc. 111, 872 (1964)

    Google Scholar 

  20. J.R. Ligenza, J. Phys. Chem. 65, 2011 (1961)

    Google Scholar 

  21. D.E. Aspnes and A.A. Studna, Appl. Optics 14, 220 (1975)

    Google Scholar 

  22. M.A. Hopper, R.A. Clarke, and L. Young, J. Electrochem. Soc. 122, 1216 (1975)

    Google Scholar 

  23. E.A. Irene. In: In Situ Real-Time Characterization of Thin Films, O. Auciello and A.R. Krauss (eds.), John Wiley & Sons, New York (2001), pp. 57–104

    Google Scholar 

  24. E.H. Nicollian, A. Goetzberger, and C.N. Berglund, Appl. Phys. Lett. 15, 174 (1969)

    Article  Google Scholar 

  25. E.H. Nicollian, C.N. Berglund, P.F. Schmidt and J.M. Andrews, J. Appl. Phys. 42, 5654 (1971)

    Article  Google Scholar 

  26. D.R. Young, E.A. Irene, D.J. DiMaria, R.F. DeKeersmaecher amd H.Z. Massoud, J. Appl. Phys. 50, 6366 (1980)

    Article  Google Scholar 

  27. E.A. Irene, J. Electrochem. Soc. 121, 1613 (1974)

    Google Scholar 

  28. P.H. Robinson and F.P. Heiman, J. Electrochem. Soc. 118, 141 (1971)

    Google Scholar 

  29. R.S. Ronen and P.H. Robinson, J. Electrochem. Soc. 119, 747 (1972)

    Google Scholar 

  30. R.J. Kriegler, Y.C. Cheng and D.R. Colton, J. Electrochem. Soc. 119, 388 (1972)

    Google Scholar 

  31. K. Hirabayshi and J. Iwamura, J. Electrochem. Soc. 120, 1595 (1973)

    Google Scholar 

  32. R.E. Tressler, J. Stach and D.M. Metz, J. Electrochem. Soc. 124, 607 (1977)

    Google Scholar 

  33. E.A. Irene and D. Dong, J. Electrochem. Soc. 125, 1146 (1978)

    Google Scholar 

  34. M.M. Atalla and E. Tannebaum, Bell Syst. Tech. J. 39, 933 (1960)

    Google Scholar 

  35. F. Leuenberger, J. Appl. Phys. 33, 2911 (1962)

    Article  Google Scholar 

  36. A.S. Grove, O. Leitstiko and C.T. Sah, J. Appl. Phys. 35, 2695 (1964)

    Article  Google Scholar 

  37. B.E. Deal, A.S. Grove, E.H. Snow and C.T. Sah, J. Electrochem. Soc. 112, 308 (1965).

    Google Scholar 

  38. B.E. Deal and M. Sklar, J. Electrochem. Soc. 112, 430 (1965)

    Google Scholar 

  39. C.S. Ho and J. Plummer, J. Electrochem. Soc. 126, 1516 and 1523 (1979)

    Google Scholar 

  40. A.G. Revesz and R.J. Evans, J. Phys. Chem. Solids 30, 551 (1969)

    Article  Google Scholar 

  41. A. Cros, J. Physique 44, 707 (1983)

    Google Scholar 

  42. A. Franciosi, P. Soukiassian, P. Phillip, S. Chang, A. Wall, A. Raisanenand and N. Trouiller, Phys. Rev. B 35, 910 (1983)

    Article  Google Scholar 

  43. M.C. Acensio, E.G. Michel, E.M. Oellig and R. Miranda, Appl. Phys. Lett. 51, 1714 (1987)

    Article  Google Scholar 

  44. P.J. Moller and J. He, J. Vac. Sci. Technol. A 21, 996, (1987)

    Article  Google Scholar 

  45. G. Abbati, L. Rossi, L. Calliari, L Braicovich, I. Lindau and W.E. Spicer, J. Vac. Sci. Technol. 21, 409 (1982)

    Article  Google Scholar 

  46. J.M. de Larios, D.B. Kao, C.R. Helms and B.E. Deal, Appl. Phys. Lett. 54, 715 (1989)

    Article  Google Scholar 

  47. W. Kern and D.A. Poutinen, RCA Review 31, 187 (1970)

    Google Scholar 

  48. B.F. Phillips, D.C. Burkman, W.R. Schmidt and C.A. Petersen, J. Vac. Sci. Technol. A 1, 646 (1983)

    Article  Google Scholar 

  49. R.C. Henderson, J. Electrochem. Soc. 119, 772 (1972)

    Google Scholar 

  50. F.N. Schwettmann, K.L. Chiang and W.A. Brown, 153rd Electrochem. Soc. Meeting, Abs. #276, May 1978

    Google Scholar 

  51. G. Gould and E.A. Irene, J. Electrochem. Soc. 134, 1031 (1987)

    Google Scholar 

  52. E.A. Irene, Appl. Phys. Lett. 40, 74 (1982)

    Article  Google Scholar 

  53. R.J. Jaccodine and W.A. Schlegel, J. Appl. Phys. 37, 2429 (1966)

    Article  Google Scholar 

  54. M.V. Whelan, A.H. Gormans and L.M. Goossens, Appl. Phys. Lett. 10, 262 (1967)

    Article  Google Scholar 

  55. E.P. EerNisse, Appl. Phys. Lett. 30, 290 (1977); 35, 8 (1979)

    Article  Google Scholar 

  56. E.A. Irene, E. Tierney and J. Angillelo, J. Electrochem. Soc. 129, 2594 (1982)

    Google Scholar 

  57. E. Kobeda and E.A. Irene, J. Vac. Sci. Technol. B 4, 720 (1986); J. Vac. Sci. Technol. B 5, 15 (1987)

    Article  Google Scholar 

  58. E.A. Taft, J. Electrochem. Soc. 125, 968 (1978)

    Google Scholar 

  59. W.A. Tiller, J. Electrochem. Soc. 127, 619, 625 (1980)

    Google Scholar 

  60. G. Lucovsky, M.J. Mantini, J.K. Srivastava and E.A. Irene, J. Vac. Sci. Technol. B 5, 530 (1987)

    Article  Google Scholar 

  61. E.A. Irene, D. Dong and R.J. Zeto, J. Electrochem. Soc. 127, 396 (1980)

    Google Scholar 

  62. H.Z. Massoud, J. Plummer and E.A. Irene, J. Electrochem. Soc. 132, 1745 (1985)

    Google Scholar 

  63. E.A. Irene, H.Z. Massoud and E. Tierney, J. Electrochem. Soc. 133, 1253 (1986)

    Google Scholar 

  64. J.J. Wortman and R.A. Evans, J. Appl. Phys. 36, 153 (1965)

    Article  Google Scholar 

  65. W.A. Brantley, J. Appl. Phys. 44, 534 (1973)

    Article  Google Scholar 

  66. E.A. Lewis and E.A. Irene, J. Electrochem. Soc. 134, 2332 (1987)

    Google Scholar 

  67. K. Ueda and M. Inoue, Surf. Sci. 161, L578 (1985)

    Google Scholar 

  68. R. Oren and S.K. Ghandi, J. Appl. Phys. 42, 752 (1971)

    Article  Google Scholar 

  69. S.A. Schafer and S.A. Lyon, J. Vac. Sci. Technol. 19, 494 (1981); S.A. Schafer and S.A. Lyon, J. Vac. Sci. Technol. 21, 422 (1982)

    Article  Google Scholar 

  70. I.W. Boyd, Appl. Phys. Lett. 42, 728 (1983); I.W. Boyd. In: Surface Studies with Lasers, F.R. Aussenberg, A. Leitner and M.E. Lippitech (eds.), Springer-Verlag, New York (1983), p. 193

    Article  Google Scholar 

  71. E.M. Young and W.A. Tiller, Appl. Phys. Lett. 42, 63 (1983); E.M. Young and W.A. Tiller, Appl. Phys. Lett. 50, 80 (1987)

    Article  Google Scholar 

  72. E.A. Irene and E.A. Lewis, Appl. Phys. Lett. 51, 767 (1987)

    Article  Google Scholar 

  73. L.M. Chanin, A.V. Phelps and M.A. Biondi, Phys. Rev. 128, 219 (1962)

    Article  Google Scholar 

  74. R. Ghez and Y.J. van der Meulen, J. Electrochem. Soc. 119, 1100 (1972)

    Google Scholar 

  75. H. Yao, J.A. Woollam and S.A. Alterovitz, Appl. Phys. Lett. 62, 3324 (1993)

    Article  Google Scholar 

  76. R. Williams and A.M. Goodman, Appl. Phys. Lett. 25, 531 (1974)

    Article  Google Scholar 

  77. T.W. Sigmon, W.K. Chu, E. Lugujjo and J.W. Mayer, Appl. Phys. Lett. 24, 105 (1974)

    Article  Google Scholar 

  78. J. Derrien and M. Commandre, Surface Science 118, 32 (1982)

    Article  Google Scholar 

  79. S.I. Raider and R. Flitsch, J. Vac. Sci. Technol. 13, 58 (1976)

    Article  Google Scholar 

  80. C.R. Helms, J. Vac. Sci. Technol. 16, 608 (1979)

    Article  Google Scholar 

  81. F.J. Grunthaner, P.J. Grunthaner, R.P. Varquez, B.F. Lewis, J. Maserjian and A. Madhukar, J. Vac. Sci. Technol. 16, 1443 (1979)

    Article  Google Scholar 

  82. H. Ibach, H.D. Bruchmann and H. Wagner, Appl. Phys. A 29, 113 (1982)

    Article  Google Scholar 

  83. P. Chiaradia and S. Nannarone, Surface Science 54, 547 (1976)

    Article  Google Scholar 

  84. H.Z. Massoud, J. Plummer and E.A. Irene, J. Electrochem. Soc. 132, 1745 (1985)

    Google Scholar 

  85. E.A. Irene, J. Electrochem. Soc. 125, 1708 (1978)

    Google Scholar 

  86. F.J. Grunthaner and P.J. Grunthaner, Chemical and Electronic Structure of the SiO2/Si Interface, Materials Science Reports 1, 65 (1987)

    Article  Google Scholar 

  87. W.A. Tiller, J. Electrochem. Soc. 128, 689 (1981)

    Google Scholar 

  88. F. Herman, I.P. Batra and R.V. Kasowski. In: The Physics of SiO2and Its Interfaces, S.T. Pantelides (ed.), Pergamon, N.Y. (1979), p. 333

    Google Scholar 

  89. B. Agius, S. Rigo, F. Rocket, M. Froment, C. Maillot, H. Roulet and G. Dufour, Appl. Phys. Lett. 44, 48 (1984)

    Article  Google Scholar 

  90. F. Rochet, B. Agius and S. Rigo, J. Electrochem. Soc. 131, 914 (1984)

    Google Scholar 

  91. V.A. Yakovlev, Q. Liu and E.A. Irene, J. Vac. Sci. Technol. A 10, 427 (1992)

    Article  Google Scholar 

  92. E.A. Taft and L. Cordes, J. Electrochem. Soc. 126, 131 (1979)

    Google Scholar 

  93. A. Kalnitsky, S.P. Tay, J.P. Ellul, S. Chongsawangvirod, J.W. Andrews, and E.A. Irene, J. Electrochem. Soc. 137, 234 (1990)

    Google Scholar 

  94. S. Chongsawangvirod, E.A. Irene, A. Kalnitsky, S.P. Tay, and J.P. Ellul, J. Electrochem. Soc. 137, 3536 (1990)

    Google Scholar 

  95. D.F. Mitchell, K.B. Clark, J.A. Bardwell, W.N. Lennard, G.R. Massoumi and L.V. Mitchell, Surface and Interface Analysis 21, 44 (1994)

    Article  Google Scholar 

  96. K.H. Gundlach, Solid State Electron 9, 949 (1996)

    Article  Google Scholar 

  97. M.E. Alferieff and C.B. Duke, J. Chem. Phys. 46, 938 (1967)

    Article  Google Scholar 

  98. J. Maserjian. In: The Physics and Chemistry of SiO2and Si-SiO2Interface, C.R. Helms and B.E. Deal (eds.), Plenum, New York (1988), p. 505

    Google Scholar 

  99. S. Zafar, Q. Liu and E.A. Irene, J. Vac. Sci. Technol. A 13(1), 47 (1995); S. Zafar, K.C. Conrad, Q. Liu, E.A. Irene, G. Hames, R. Kuehn and J.J. Wortman, Appl. Phys. Lett. 67, 1031 (1995)

    Article  Google Scholar 

  100. K.J. Hebert, S. Zafar, E.A. Irene, R Kuehn, T.E. McCarthy and E.K. Demirlioglu, Appl. Phys. Lett. 68, 266 (1996)

    Article  Google Scholar 

  101. K.J. Hebert, T. Labayen and E.A. Irene. In: Physics and Chemistry of SiO2and the Si-SiO2Interface III, H.Z. Massoud, C.R. Helms and E.H. Poindexter (eds.), The Electrochemical Soc. Inc., New Jersey, USA (1996), p. 81

    Google Scholar 

  102. E.A. Irene, Solid State Electronics 45, 1207 (2001)

    Article  Google Scholar 

  103. Y. Wang and E.A. Irene, J. Vac. Sci. Technol. B 18(1), 279, (2000)

    Article  Google Scholar 

  104. L. Spanos and E.A. Irene, J. Vac. Sci. Technol. A 12(5), 2646 (1994)

    Article  Google Scholar 

  105. L. Spanos, Q. Liu, T. Zettler, B. Hornung, J.J. Wortman and E.A. Irene, J. Vac. Sci. Technol. A 12(5), 2653, (1994)

    Article  Google Scholar 

  106. Q. Liu, L. Spanos, C. Zhao and E.A. Irene, J. Vac. Sci. Technol. A 13, 1977 (1995)

    Article  Google Scholar 

  107. C. Zhao, P.R. Lefebvre and E.A. Irene, Thin Solid Films 313–314, 286 (1998)

    Article  Google Scholar 

  108. L. Lai and E.A. Irene, J. Appl. Phys. 86(3), 1729 (1999)

    Article  Google Scholar 

  109. L. Lai, K.J. Hebert and E.A. Irene, J. Vac. Sci. Technol. B 17, 53 (1999)

    Article  Google Scholar 

  110. L. Lai and E.A. Irene, J. Vac. Sci. Technol. B 17, 33 (1999)

    Article  Google Scholar 

  111. K.J. Hubbard and D.G. Schlom, J. Mater. Res. 11, 2757 (1996)

    Google Scholar 

  112. Y. Gao, A.H. Mueller, E.A. Irene, O. Auciello, A. Krauss and J.A. Schultz, J. Vac. Sci. Technol. A 17, 1880 (1999)

    Article  Google Scholar 

  113. Y.M. Sun, J. Lozano, H. Ho, H.J. Park, S. Veldman and J.M. White, Appl. Surface Sci. 161, 115 (2000)

    Article  Google Scholar 

  114. R.A. McKee, F.J. Walker and M.F Chisholm, Phys. Rev. Lett. 81, 3014 (1998)

    Article  Google Scholar 

  115. A.H. Mueller, N.A. Suvorova, E.A. Irene, O. Auciello and J.A. Schultz, Appl. Phys. Lett. 80, 3796 (2002)

    Article  Google Scholar 

  116. A.H. Mueller, N.A. Suvorova and E.A. Irene, Appl. Phys. Lett. 80, 3596 (2002)

    Article  Google Scholar 

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    H.R. Huff

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    D.C. Gilmer

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Irene, E. (2005). SiO2 Based MOSFETS: Film Growth and Si—SiO2 Interface Properties. In: Huff, H., Gilmer, D. (eds) High Dielectric Constant Materials. Springer Series in Advanced Microelectronics, vol 16. Springer, Berlin, Heidelberg. https://doi.org/10.1007/3-540-26462-0_3

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