Abstract
Strained silicon field effect transistor (FET) has been known for enhancing carrier mobility. The stained Si channel thickness, the Si1 − − xGe x composition fraction and the Si1 − − xGe x layer thickness are three crucial parameters for designing strained Si/SiGe MOSFET. Mobility enhancement and device reliability may be unnecessarily conservative. In this paper, numerical investigation of drain current, gate leakage and threshold voltage for strained Si/SiGe MOSFET are simulated under different device profiles. According to our results, the optimal combination of parameters are as follows: stained Si channel thickness is 7 nm, Ge content is 20%, and the Si1 − − xGe x layer thickness should be chosen between 20~50 nm.
Chapter PDF
Similar content being viewed by others
References
Kwa, K.S.K., Chattopadhyay, S., Olsen, S.H., Driscoll, L.S., O’Neill, A.G.: Optimization of Channel Thickness in Strained Si/SiGe MOSFETs. In: Proc. ESSDERC, pp. 501–504 (2003)
Olsen, S.H., O’Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.S.K., Waite, A.M., Tang, Y.T., Evans, A.G.R., Zhang, J.: Optimization of Alloy Composition for High-Performance Strained-Si-SiGe N-Channel MOSFETs. IEEE Trans. Elec. Dev. 51, 1156–1163 (2004)
Bløtekjær, K.: Transport Equations for Electrons in Two-Valley Semiconductors. IEEE Trans. Elec. Dev. ED-17, 38–47 (1970)
Wettstein, A., Schenk, A., Fichtner, W.: Quantum Device-Simulation with the Density-Gradient Model on Unstructured Grids. IEEE Trans. Electron Devices 48, 279–284 (2001)
Bürgler, J.F., Bank, R.E., Fichtner, W., Smith, R.K.: A New Discretization Scheme for the Semiconductor Current Continuity Equations. IEEE Trans. CAD 8, 479–489 (1989)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2006 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Lo, SC., Yu, SM. (2006). A Quantum Hydrodynamic Simulation of Strained Nanoscale VLSI Device. In: Alexandrov, V.N., van Albada, G.D., Sloot, P.M.A., Dongarra, J. (eds) Computational Science – ICCS 2006. ICCS 2006. Lecture Notes in Computer Science, vol 3991. Springer, Berlin, Heidelberg. https://doi.org/10.1007/11758501_167
Download citation
DOI: https://doi.org/10.1007/11758501_167
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-34379-0
Online ISBN: 978-3-540-34380-6
eBook Packages: Computer ScienceComputer Science (R0)