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Structural Evolution of the Silicon/Oxide Interface During Passive and Active Oxidation

  • Chapter
Fundamental Aspects of Silicon Oxidation

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 46))

Abstract

The dynamic events which occur at the silicon/oxide interface during oxidation are of fundamental importance both in developing models to explain oxidation kinetics and in understanding how interface structure influences the properties of microelectronic devices. Of particular interest is the evolution of interface roughness during oxidation. With modern gate oxides only a few atomic layers thick, any roughness at the silicon/oxide interface affects device performance significantly so that understanding and controlling interface morphology becomes necessary. Interface step behaviour is also important in understanding the mechanism of the oxidation reaction, helping to develop models for the reactivity of atoms at different sites and the order in which bonds are broken. Furthermore, the flow of surface steps during active oxidation (also referred to as etching) can be a powerful tool to modify surface morphology, as required in some interesting novel devices. So from both a practical and a fundamental point of view there is great interest in following the structural evolution of the silicon/oxide interface during oxidation.

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  1. F. M. Ross
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Editors and Affiliations

  1. Agere Systems, Electronic and Photonic Materials Physics Research, 600-700 Mountain Avenue, Murray Hill, NJ, 07974-0636, USA

    Yves J. Chabal

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Ross, F.M., Gibson, J.M. (2001). Structural Evolution of the Silicon/Oxide Interface During Passive and Active Oxidation. In: Chabal, Y.J. (eds) Fundamental Aspects of Silicon Oxidation. Springer Series in Materials Science, vol 46. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-56711-7_3

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  • DOI: https://doi.org/10.1007/978-3-642-56711-7_3

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