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New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds

Condensed Matter, Semiconductors Update, Subvolume E

  • Book
  • © 2012

Overview

Editors:
  1. U. Rössler

    1. Institut für Theoretische Physik, Universität Regensburg, Regensburg, Germany

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Part of the book series: Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology - New Series (LANDOLT 3, volume 44E)

Part of the book sub series: Condensed Matter (LANDOLT 3)

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About this book

The Landolt-Börnstein subvolume III/44E is the fifth part of an update to the existing eight volumes III/41 about Semiconductors and contains New Data and Updates for III-V, and II-VI compounds and their mixed crystals. Each compound is described with respect to its properties, the corresponding references are provided.

Table of contents (150 chapters)

  1. AlSb, zincblende modification: critical point energies

    • E. C. F. da Silva
    Pages 28-28

  2. AlSb: interband transition energies

    • E. C. F. da Silva
    Pages 29-29

  3. AlSb, zincblende modification: spin-orbit splitting

    • E. C. F. da Silva
    Pages 30-30

  4. AlSb, zincblende modification: effective mass parameters

    • E. C. F. da Silva
    Pages 31-31

  5. AlSb, wurtzite modification: effective mass parameters

    • E. C. F. da Silva
    Pages 32-33

  6. AlSb, wurtzite modification: Dresselhaus spin-splitting parameters

    • E. C. F. da Silva
    Pages 34-35

  7. AlSb, zincblende modification: Dresselhaus spin-splitting parameter

    • E. C. F. da Silva
    Pages 36-36

  8. AlSb, zincblende modification: dielectric constant

    • E. C. F. da Silva
    Pages 37-38

  9. BAs: spin-orbit splitting

    • E. C. F. da Silva
    Pages 39-39

  10. GaAs: effective Landé g-factor

    • E. C. F. da Silva
    Pages 40-40

  11. GaAs, wurtzite modification: band structure, energies at symmetry points

    • E. C. F. da Silva
    Pages 41-42

  12. GaAs, wurtzite modification: energy gap

    • E. C. F. da Silva
    Pages 43-43

  13. GaAs, wurtzite modification: effective mass parameters

    • E. C. F. da Silva
    Pages 44-45

  14. GaAs, wurtzite modification: Dresselhaus spin-splitting parameters

    • E. C. F. da Silva
    Pages 46-47

  15. GaAs: conduction-band offsets, valence-band offsets

    • E. C. F. da Silva
    Pages 48-49

  16. GaAs: electro-optic coefficient

    • E. C. F. da Silva
    Pages 50-50

  17. GaAs: local density of states

    • E. C. F. da Silva
    Pages 51-52

  18. GaAs: binding energies

    • E. C. F. da Silva
    Pages 53-53

  19. GaxIn1-xAs: energy gaps

    • E. C. F. da Silva
    Pages 54-54

  20. GaxIn1-xAs: carrier lifetime

    • E. C. F. da Silva
    Pages 55-55
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Editors and Affiliations

  • Institut für Theoretische Physik, Universität Regensburg, Regensburg, Germany

    U. Rössler

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