Abstract
This document is part of Subvolume E 'New Data and Updates for several III-V (including mixed crystals) II-VI Compounds' of Volume 44 'Semiconductors' of Landolt-Börnstein - Group III 'Condensed Matter'.
It deals with the binding energies of GaAs.
Contained Elements: As-Ga
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Keywords
substance: | gallium arsenide (GaAs) |
property: | binding energies (impurities and defects) |
binding energies of Si donors
For the binding energy of Si donors in GaAs as a function of their distance below the GaAs surface, determined by low-temperature scanning tunneling spectroscopy, see Fig. 1 [09W].
GaAs. Binding energy of Si donors as a function of their distance below the (110) GaAs surface, estimated by a scanning tunneling spectroscopy method [09W]. The line is a guide to the eye.
References
Wijnheijmer, A.P., Garleff, J.K., Teichmann, K., Wenderoth, M., Loth, S., Ulbrich, R.G., Maksym, P.A., Roy, M., Koenraad, P.M.: Phys. Rev. Lett. 102 (2009) 166101.
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da Silva, E.C.F. (2012). GaAs: binding energies. In: Rössler, U. (eds) New Data and Updates for several III-V (including mixed crystals) and II-VI Compounds. Landolt-Börnstein - Group III Condensed Matter, vol 44E. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-23415-6_37
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DOI: https://doi.org/10.1007/978-3-642-23415-6_37
Publisher Name: Springer, Berlin, Heidelberg
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