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Ballistic transport through a sharp domain wall in a semiconducting ferromagnetic nanoconstriction and in the presence of the Dresselhaus spin-orbit coupling

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Abstract.

We study the effect of the Dresselhaus spin-orbit interaction on the magnetoresistance (MR) of a quasi-one-dimensional ferromagnetic semiconductor containing a sharp domain wall. The MR is calculated in the ballistic regime, within the Landauer-Büttiker formalism. The results show that the Dresselhaus spin-orbit coupling which induces an effective magnetic field along the wire, reduces the domain wall MR.

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Authors and Affiliations

  1. Laser and Plasma Research Institute, Shahid Beheshti University, G.C., Evin 1983963113, Tehran, Iran

    M. Ghanaatshoar & V. Fallahi

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  1. M. Ghanaatshoar
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  2. V. Fallahi
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Correspondence to M. Ghanaatshoar.

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Ghanaatshoar, M., Fallahi, V. Ballistic transport through a sharp domain wall in a semiconducting ferromagnetic nanoconstriction and in the presence of the Dresselhaus spin-orbit coupling. Eur. Phys. J. B 80, 401–405 (2011). https://doi.org/10.1140/epjb/e2011-10626-0

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  • DOI: https://doi.org/10.1140/epjb/e2011-10626-0

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