Effect of electron-phonon interaction on surface states in zinc-blende GaN, AlN, and InN under pressure

  • Z. W. Yan
  • S. L. Ban
  • X. X. Liang


A variational approach is used to study the surface states of electrons in a semi-infinite polar semiconductor under hydrostatic pressure. The effective Hamiltonian and the surface-state levels are derived including the effects of electron-optical phonon interaction and pressure. The numerical computation has been performed for the surface-state energies versus pressure for zinc-blende GaN, AlN, and InN. The results show that the effect of electron-optical phonon interaction lowers the surface-state energy. It is also found that the effect of electron-surface optical phonon interaction is much bigger than the effect of electron-half space longitudinal optical phonon interaction for surface-state levels. It indicates that the surface-state energies and the influence of electron-phonon interaction increase with pressure obviously.


Numerical Computation Surface State Hydrostatic Pressure Variational Approach Optical Phonon 
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Copyright information

© Springer-Verlag Berlin/Heidelberg 2003

Authors and Affiliations

  1. 1.CCAST (World Laboratory)BeijingP.R. China
  2. 2.Department of PhysicsInner Mongolia UniversityHohhotP.R. China
  3. 3.Department of Basic SciencesInner Mongolia Agricultural UniversityHohhotP.R. China

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