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Band gaps and charge distribution in quasi-binary (GaSb) (InAs) crystals

  • N. Bouarissa

Abstract:

Pseudopotential investigation of energy band gaps and charge distribution in quasi-binary (GaSb)1-x(InAs)x crystals has been reported. To the best of our knowledge, there had been no reported theoretical work on these materials. In agreement with experiment, the quasi-binary crystals of interest showed a significant narrowing of the optical band gap compared to the conventional GaxIn1-xAsySb1-y quaternary alloys (with x = 1 - y). Moreover, the absorption at the optical gaps indicated that (GaSb)1-x(InAs)x is a direct Γ to Γ band-gap semiconductor within a whole range of the x composition. The information derived from the present study predicts that the band gaps cross very important technological spectral regions and could be useful for thermophotovoltaic applications.

PACS. 71.20.-b Electron density of states and band structure of crystalline solids – 71.23.Ft Quasicrystals – 71.28.+d Narrow-band systems 

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Copyright information

© EDP Sciences, Springer-Verlag 2003

Authors and Affiliations

  • N. Bouarissa
    • 1
  1. 1.International Center for Theoretical Physics, Trieste 34100, ItalyIT

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