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Relationships between a microscopic parameter and the stochastic equations for interface's evolution of two growth models

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The European Physical Journal B - Condensed Matter and Complex Systems Aims and scope Submit manuscript

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The relationship between a microscopic parameter p, that is related to the probability of choosing a mechanism of deposition, and the stochastic equation for the interface's evolution is studied for two different models. It is found that in one model, that is similar to ballistic deposition, the corresponding stochastic equation can be represented by a Kardar-Parisi-Zhang (KPZ) equation where both λ and ν depend on p in the following way: ν(p) = νp and λ(p) = λp 3/2. Furthermore, in the other studied model, which is similar to random deposition with relaxation, the stochastic equation can be represented by an Edwards-Wilkinson (EW) equation where ν depends on p according to ν(p) = νp 2. It is expected that these results will help to find a framework for the development of stochastic equations starting from microscopic details of growth models.

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Received 26 August 2002 / Received in final form 20 November 2002 Published online 6 March 2003

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ID="a"e-mail: ealbano@inifta.unlp.edu.ar

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Horowitz, C., Albano, E. Relationships between a microscopic parameter and the stochastic equations for interface's evolution of two growth models. Eur. Phys. J. B 31, 563–569 (2003). https://doi.org/10.1140/epjb/e2003-00066-x

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  • DOI: https://doi.org/10.1140/epjb/e2003-00066-x

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