Model approach to low-energy inelastic silicon–hydrogen collision processes
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Cross sections and rate coefficients for inelastic processes in Si + H and Si+ + H– collisions are calculated for all transitions between 27 low-lying states up to and including the ionic state. The electronic molecular structure is determined within a recently proposed model approach based on the asymptotic method. Nonadiabatic nuclear dynamics is treated by means of the multichannel formula for nonadiabatic transition probabilities based on the Landau–Zener model. It is shown that the highest rate values correspond to excitation and de-excitation processes between states in the optimal window, as well as for ion pair formation and neutralization processes between these states and the ionic one.
Keywordsatomic data inelastic processes low-energy collisions
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