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Electron beam induced current investigation of planar photodiode structures on InSb crystals

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Abstract

Multielement planar photodiode structures produced on InSb crystals using Be+ ion implantation to form a p +-n junction and anodic oxidation to protect the surface are studied in the Electron Beam Induced Current (EBIC) mode. It is found that the initial crystal doping level affects the EBIC distribution across the crystal surface outside the planar boundaries of the p +-n junction. It is shown that the most perfect p +-n junctions are formed on crystals with the highest resistivity when the lowest values of the implantation energy and dose are applied and pulse photon postimplantation annealing is used. The diffusion lengths in all the types of the structures in study are estimated. It is found that the level of anodic oxide charging by the electron beam depends on the electrolyte composition used in the anodic treatment.

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Authors and Affiliations

  1. OAO “Moskovskii Zavod “Sapfir”, Moscow, Russia

    V. P. Astakhov & M. V. Astakhov

  2. Institute of Microelectronic Technology and Ultra-High-Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow, 142432, Russia

    V. V. Karpov & E. B. Yakimov

Authors
  1. V. P. Astakhov
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  2. M. V. Astakhov
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  3. V. V. Karpov
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  4. E. B. Yakimov
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Additional information

Original Russian Text © V.P. Astakhov, M.V. Astakhov, V.V. Karpov, E.B. Yakimov, 2007, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, No. 1, pp. 50–54.

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Astakhov, V.P., Astakhov, M.V., Karpov, V.V. et al. Electron beam induced current investigation of planar photodiode structures on InSb crystals. J. Surf. Investig. 1, 44–48 (2007). https://doi.org/10.1134/S1027451007010089

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  • DOI: https://doi.org/10.1134/S1027451007010089

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