Abstract
Al2O3/Cu composite films, useful for film resistors, were successfully fabricated at room temperature via aerosol deposition (AD). Microstructures of the Al2O3/Cu composite films were analyzed to understand the correlations between the surface morphologies and Al2O3/Cu ratio. A scratch test was carried out by gradually increasing the load applied to the Al2O3/Cu composite films. We also evaluated the adhesion ability by measuring the tensile strength between Al2O3/Cu composite films and Al2O3 substrate. The results confirmed that the adhesive properties of Al2O3/Cu composite films were strongly influenced by two adhesive mechanisms: mechanical interlocking and anchoring bonds between the films and Al2O3 substrate. When a powder mixture containing 50 wt% of Al2O3 and Cu was deposited on the substrate, high mechanical properties and suitable resistivity were simultaneously achieved at approximately 8.02 MPa and 85.2 mΩ cm, respectively due to effective mechanical interlocking and anchoring bonds. The results further suggest that room-temperature AD method is highly favorable to fabricate heterogeneous composite films for application to film resistors.
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Acknowledgements
This present Research has been conducted by the Research Grant of Kwangwoon University in 2018. And, this work was supported by the National Research Foundation of Korea (NRF) funded by Korean government (MSIP; Ministry of Science, ICT and Future Planning) (No. 2018R1D1A1B07045295) and the High Level Track of Power Semiconductor Technology for Renewable Energy and Electrical Vehicle (No. 20174010201290) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP).
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Cho, MY., Lee, DW., Ko, PJ. et al. Adhesive Mechanism of Al2O3/Cu Composite Film via Aerosol Deposition Process for Application of Film Resistor. Electron. Mater. Lett. 15, 227–237 (2019). https://doi.org/10.1007/s13391-018-00111-w
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DOI: https://doi.org/10.1007/s13391-018-00111-w