In this paper, a new Si0.6Ge0.4/Si heterostructure tunneling field-effect transistor with segmented drain (SiGe/Si SD TFET) is proposed and simulated by Silvaco ATLAS simulator. The drain segmentation increases the tunneling barrier width at the drain/channel interface and hence reduces ambipolar current (Iamb) considerably. Moreover, the amalgam of Si0.6Ge0.4 source and silicon channel allows much improved On-state current (Ion) with lower Off-state leakage current (Ioff). The presence of high bandgap silicon material keeps the lower recombination rate of the carriers in the channel region, thus provides a much higher Ion/Ioff ratio of 5.64 × 1011. The segmented drain exhibits more than 4-decades improvement in Iamb without affecting Ion and Ioff. The thickness and doping profile of the segmented drain region are calibrated to achieve a higher Ion/Iamb ratio of 3.29 × 109 with an average subthreshold swing (SS) of 42 mV/decade. The investigation is further extended by considering the interface trap charges (ITCs) at the HfO2/Si interface for different positive and negative density values.
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Dash, S., Mohanty, S.K. & Mishra, G.P. Segmented Drain Engineered Tunnel Field Effect Transistor for Suppression of Ambipolarity. Silicon (2021). https://doi.org/10.1007/s12633-021-00973-0
- SiGe TFET
- Bandgap modulation
- Ge composition
- Segmented drain
- Ambipolar current