Abstract
The melt-crystal (m-c) interface shape and impurities distribution in multi-crystalline silicon (mc-Si) were investigated in Directional Solidification (DS) method. The two different heater designs with DS were investigated by using numerical analysis. The modified multiple-heaters (MMH) have lower surface area compared to the conventional multiple-heaters (CMH). Carbon comes from the heated graphite surface, oxygen originates from the crucible. Carbon and oxygen are strongly correlated with gaseous SiO and CO. Collision of gaseous SiO2- molecules with graphite surface generates SiO and CO gases during the growth process. The CMH produced more carbon atoms in the solidification process and also it gives more convex m-c interface shape. The MMH produced fewer carbon atoms compared to the CMH and also it gives slightly convex m-c interface shape. The MMH has reduced the carbon and oxygen in the silicon ingot. And also, it has reduced gaseous impurities in the solidification process. So, we have concluded that modified heater may reduce the impurities in the grown mc-Si.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Raabe L et al (2011) The effect of graphite components and crucible coating on the behavior of carbon and oxygen in multicrystalline silicon. J Cryst Growth 318:234–238
Teng Y-Y et al (2011) Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multi-crystalline silicon ingots by the directional solidification process. J Cryst Growth 318:224–229
Liu L et al (2008) Carbon concentration and particle precipitation during directional solidification of multicrystalline silicon for solar cells. J Cryst Growth 310:2192–2197
Li Z et al (2011) Effects of argon flow on impurities transport in a directional solidification furnace for silicon solar cells. J Cryst Growth 318:304–312
David E et al (1995) The effects of Gas-Phase convection on carbon contamination of Czochralski-Grown silicon. J crystal Growth, I. Electrochem Soc, (142) 8:2790–2804
Ganesan NS et al Simulation analysis on impurity distribution in mc-Si grown by directional solidification for solar cell applications. https://doi.org/10.3139/146.111375
Teng Y-Y et al (2011) Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process. J Cryst Growth 318:224–229
Teng Y-Y et al (2010) The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process. J Cryst Growth 312:1282–1290
Chen J-C et al (2014) Three-dimensional numerical simulation of flow, thermal and oxygen distributions for a Czochralski silicon growth with in a transverse magnetic field. J Cryst Growth 401:813–819
Ma X et al (2011) Thermal system design and optimization of an industrial silicon directional solidification system. J Crystal Growth 318:288–292
Nakano S et al (2013) Relationship between oxygen impurity distribution in multicrystalline solar cell silicon and the use of top and side heaters during manufacture. J Cryst Growth 375:62–66
Yang X et al (2014) A modified vacuum directional solidification system of multi-crystalline silicon based on optimizing for heat transfer. J Crystal Growth 400:7–14
Fang HS et al (2012) Influence of furnace design on the thermal stress during directional solidification of multi-crystalline silicon. J Cryst Growth 346:5–11
Miyazawa H et al (2009) Numerical investigation of the influence of material property of a crucible on interface shape in a unidirectional solidification process. Crystal Growth Des 9:267–272
Chen L et al (2012) Optimization of power consumption on silicon directional solidification system by using numerical simulations. J Cryst Growth 354:86–92
Qi X et al (2014) Optimization via simulation of a seeded directional solidification process for quasi-single crystalline silicon ingots by insulation partition design. J Cryst Growth 398:5–12
Wei J et al (2009) Modeling and improvement of silicon ingot directional for industrial production system. Solar Energy Mater Solar Cells 93:1531–1539
Xin UU et al (2014) Carbon contamination during melting process of czochralski silicon crystal growth, reports of research institute for applied mechanics, Kyushu University No.147 (1 - 5)
Xin et al Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth, Journal of Crystal Growth. https://doi.org/10.1016/j.jcrysgro.2014.07.040
Qi X et al (2014) Improved seeded directional solidification process for producing high- efficiency multi-crystalline silicon ingots for solar cells. Solar Energy Mater Solar Cells 130:118–123
Li Z et al Heat transfer in an industrial directional solidification furnace with multi-heaters for silicon ingots. https://doi.org/10.1016/j.jcrysgro.2013.01.053i
Matsuo H et al (2008) Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell. J Cryst Growth 310:4666–4671
Acknowledgments
This work is supported by the Ministry of New and Renewable Energy (MNRE), the Government of India (Order No: 31/58/2013-2014/PVSE2).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kesavan, V., Srinivasan, M. & Ramasamy, P. The Influence of Multiple-Heaters on the Reduction of Impurities in mc-Si for Directional Solidification. Silicon 11, 1335–1344 (2019). https://doi.org/10.1007/s12633-018-9928-7
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12633-018-9928-7