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Simulation Analysis of Direction Solidification Process with Fixed Partition Block to Grow Multi Crystalline Silicon Ingot

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Abstract

The simulation of Directional Solidification (DS) process without partition block and with partition block has been carried to grow multi crystalline silicon (mc-Si) ingot and the results were compared and analyzed. The melt-crystal interface shape, power consumption and dislocation densities for both furnaces have been analyzed. Their results revealed that the partition block largely influences the shape of the melt-crystal interface of the mc-Si ingot and consumes lower power than the DS furnace without partition block. The partition block in the DS furnace separates the heater region from the heat dissipation region and prevents radiant heat energy loss about 10 to 12 KWh during the solidification process. However the dislocation density in the mc-Si ingot grown with partition block DS furnace is slightly increased due to the higher radial temperature gradient. Since the dislocation density in both cases has not increased higher than 10− 8 1/m2 it will not affect the solar cell conversion efficiency. Here the effect of partition block on melt-crystal interface shape, dislocation density and power consumption in the DS furnace has been analyzed.

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Acknowledgements

This work is supported by Ministry of New and Renewable Energy (MNRE), the Government of India (Order No: 31/58/2013-2014/PVSE2).

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Authors and Affiliations

  1. SSN Research Center, SSN College of Engineering, Chennai, India

    S. G. Nagarajan, G. Anbu, M. Srinivasan, K. Aravinth & P. Ramasamy

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  1. S. G. Nagarajan
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  2. G. Anbu
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  3. M. Srinivasan
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  4. K. Aravinth
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  5. P. Ramasamy
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Correspondence to P. Ramasamy.

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Nagarajan, S.G., Anbu, G., Srinivasan, M. et al. Simulation Analysis of Direction Solidification Process with Fixed Partition Block to Grow Multi Crystalline Silicon Ingot. Silicon 11, 401–406 (2019). https://doi.org/10.1007/s12633-018-9851-y

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  • DOI: https://doi.org/10.1007/s12633-018-9851-y

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