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Raman Scattering and Backscattering Studies of Silicon Nanocrystals Formed Using Sequential Ion Implantation

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Abstract

Silicon nanocrystals were produced using a two-stage gold ion implantation technique. The first stage implantation using low energy ions led to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the second stage was found to produce strained Si NCs. An annealing step at a temperature as low as 500 °C was seen to result in strain free NCs. Higher temperature annealing of the samples was found to result in a growth in size from recrystallization of the a-Si matrix. Raman Scattering, X-Ray diffraction and Rutherford Backscattering Spectrometry have been used to study the effect of annealing on the samples and the size of the Si NCs formed. The data can be well explained using a phonon confinement model with an extremely narrow size distribution. The XRD results are in line with the Raman analysis.

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Authors and Affiliations

  1. Discipline of Physics, School of Basic Sciences, Indian Institute of Technology, Indore, Madhya Pradesh, 452017, India

    Gayatri Sahu & Rajesh Kumar

  2. Discipline of Surface Science and Engineering, Indian Institute of Technology, Indore, Madhya Pradesh, 452017, India

    Rajesh Kumar

  3. Institue of Physics, Sachivalaya Marg, Bhubaneswar, 751005, Odisha, India

    Durga Prasad Mahapatra

Authors
  1. Gayatri Sahu
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  2. Rajesh Kumar
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  3. Durga Prasad Mahapatra
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Correspondence to Gayatri Sahu.

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Sahu, G., Kumar, R. & Mahapatra, D.P. Raman Scattering and Backscattering Studies of Silicon Nanocrystals Formed Using Sequential Ion Implantation. Silicon 6, 65–71 (2014). https://doi.org/10.1007/s12633-013-9157-z

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