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Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si

  • Topical Collection: 17th Conference on Defects (DRIP XVII)
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Abstract

Oxygen precipitates (OPs) are unavoidably formed in Czochralski silicon (CZ-Si) containing relatively high concentrations of oxygen. The recombination behavior of such defects is also vital for bulk devices like solar cells as they can reduce the minority carrier lifetime and degrade the cell performance. In our experiments, the characteristics of oxygen precipitation in n-type CZ-Si are systematically investigated by means of Fourier transform infrared spectroscopy (FTIR), deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). It is found that the iron contamination in n-type CZ-Si can strongly influence the OPs generation and their electrical properties, whereas the hydrogen passivation can effectively reduce the recombination activity of OPs.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Jiyang Li, Xuegong Yu & Deren Yang

  2. College of Materials and Environmental Engineering, Hangzhou Dianzi University, No. 1, 2nd Street, Jianggan District, Hangzhou, 310018, People’s Republic of China

    Lihui Song

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  1. Jiyang Li
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  2. Lihui Song
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  3. Xuegong Yu
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  4. Deren Yang
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Correspondence to Xuegong Yu or Deren Yang.

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Li, J., Song, L., Yu, X. et al. Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si. J. Electron. Mater. 47, 5039–5044 (2018). https://doi.org/10.1007/s11664-018-6299-1

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  • DOI: https://doi.org/10.1007/s11664-018-6299-1

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