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Defect-Related Electroluminescence in the 1.2–1.7 μm Range from Boron-Implanted Silicon at Room Temperature

  • Topical Collection: 17th Conference on Defects (DRIP XVII)
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Abstract

The room-temperature electroluminescence (EL) band in the 1.2–1.7 μm range in boron-implanted silicon with implantation energy of 50 keV and 700 keV was investigated. This band is attributed to the defects in the implantation region introduced by implanted ions. The defects are unstable under the annealing temperature as low as 350°C. The EL intensity of the device implanted at 700 keV is much stronger than that of the device implanted at 50 keV due to the higher defect concentration and the improved minority carrier injection ratio. The absence of this band in photoluminescence measurements indicates that the luminescence band can only be electrically driven. Further enhancement of this EL band can be achieved by optimizing the implantation parameters.

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Yuhan Gao, Hao Shen, Jiahao Cao, Dongsheng Li & Deren Yang

Authors
  1. Yuhan Gao
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  2. Hao Shen
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  3. Jiahao Cao
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  4. Dongsheng Li
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  5. Deren Yang
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Correspondence to Dongsheng Li or Deren Yang.

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Gao, Y., Shen, H., Cao, J. et al. Defect-Related Electroluminescence in the 1.2–1.7 μm Range from Boron-Implanted Silicon at Room Temperature. J. Electron. Mater. 47, 4970–4974 (2018). https://doi.org/10.1007/s11664-018-6194-9

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  • DOI: https://doi.org/10.1007/s11664-018-6194-9

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