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Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach

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Abstract

We compute small-signal and noise quantities of nMOSFETs with different channel lengths with a fully self-consistent and deterministic Poisson, Schrödinger, and Boltzmann equation solver. We show how noise qualitatively changes due to short-channel effects and how noise is generated in the domain of ballistic transport. Furthermore, we inspect the suppression of noise due to the Pauli principle and due to the coupling to the fluctuations of the potential.

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Notes

  1. This is possible because 1 / f noise is not considered in this work.

  2. Due to the H-transformation all small-signal results contain bias-dependent variations which vanish for zero energy spacing of the H-grid [14].

  3. Since all considered scattering processes are charge conserving, a fluctuation cannot actually create a difference in the total charge. But a scattering process is synonymous to a creation of charge at one energy and an annihilation at another. The zeroth harmonic of the Green’s function of the drain terminal current expresses how such a creation of charge in a scattering process influences the drain terminal current.

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Authors and Affiliations

  1. RWTH Aachen University, 52056, Aachen, Germany

    Dino Ruić & Christoph Jungemann

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  1. Dino Ruić
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  2. Christoph Jungemann
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Correspondence to Dino Ruić.

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Funding by the Deutsche Forschungsgemeinschaft (Ref.No.: JU406/9-1, ME1590/7-1) is gratefully acknowledged.

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Ruić, D., Jungemann, C. Microscopic noise simulation of long- and short-channel nMOSFETs by a deterministic approach. J Comput Electron 15, 809–819 (2016). https://doi.org/10.1007/s10825-016-0840-3

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