Abstract
We investigate the impact of ErAs:GaAs and LuAs:GaAs superlattice structures with different LuAs/ErAs nanoparticle depositions and superlattice geometries on terahertz radiation properties of plasmonic photomixers operating at a 780-nm optical wavelength. Our analysis indicates the crucial impact of carrier drift velocity and carrier lifetime on the performance of plasmonic photomixers. While higher carrier drift velocities enable higher optical-to-terahertz conversion efficiencies by offering higher quantum efficiencies, shorter carrier lifetimes allow achieving higher optical-to-terahertz conversion efficiencies by mitigating the negative impact of destructive terahertz radiation from slow photocarriers and preventing the carrier screening effect.
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Acknowledgments
The authors gratefully acknowledge the financial support from Presidential Early Career Award for Scientists and Engineers (# N00014-14-1-0573 and # W911NF-09-1-0434), NSF CAREER Award (# N00014-11-1-0096), and ONR Young Investigator Award (# N00014-12-1-0947).
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Yang, SH., Salas, R., Krivoy, E.M. et al. Characterization of ErAs:GaAs and LuAs:GaAs Superlattice Structures for Continuous-Wave Terahertz Wave Generation through Plasmonic Photomixing. J Infrared Milli Terahz Waves 37, 640–648 (2016). https://doi.org/10.1007/s10762-016-0255-z
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DOI: https://doi.org/10.1007/s10762-016-0255-z