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Domain Wall Memory Device

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Handbook of Spintronics

Abstract

Magnetic domain walls in confined geometries have attracted much interest in the last couple of years for a number of reasons. On the one hand, new physical phenomena such as current-induced domain wall motion due to the highly debated nonadiabatic spin torque and novel spin–orbit torques have been investigated. On the other hand, the proposal of the racetrack memory concept as a universal data storage device has stimulated much research. In such a device, domain walls in magnetic nanowires are used as bits of information which can be shifted, e.g., to locate them at the position of a read head, without the need to move physically any material. The prospect of memory and logic devices has spurred an intense research, in particular into different materials with promising properties for domain walls and domain wall motion. The critical parameters to be optimized are mainly domain wall lateral sizes, directly governing the possible information density, and domain wall movement and pinning/depinning processes that determine access time and energy consumption. The ability to control and manipulate domain walls precisely opens up avenues to designing a range of novel and highly competitive devices.

In this chapter, a review of the properties of magnetic domain walls in nanowires and the possibilities to control and manipulate them is given. Precise control and efficient manipulation of domain walls is the prerequisite for any device. Different material classes and the resulting domain wall types are reviewed. The basic operations that are necessary for a device, i.e., nucleation, displacement, and detection of domain walls, are discussed for these material classes. Examples of devices using magnetic domain walls are briefly reviewed, including memory and logic applications. The first commercial nonvolatile multiturn sensor product that is based on magnetic domain walls and combines sensing and memory is described in more detail.

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Abbreviations

1D, 2D, 3D:

One, two, or three dimensional

3d :

Elements from the first side group in the periodic table with 3D electron in the outer shell, from Sc to Zn, in magnetic context usually Fe, Co, Ni (Mn, Cr), and their alloys

AMR:

Anisotropic magnetoresistance

ccw:

Counterclockwise

CFAS:

Co2FeAl0.4Si0.6

CIDWM:

Current-induced domain wall motion

CIP:

Current in-plane

CMOS:

Complementary metal oxide semiconductor

CPP:

Current perpendicular to plane

cw:

Clockwise

DC:

Direct current

DMI:

Dzyaloshinskii–Moriya interaction

DW:

Domain wall

DWG:

Domain wall generator

EHE:

Extraordinary Hall effect

FTH:

Fourier transform holography (with X-rays)

GMR:

Giant magnetoresistance

IBM:

Industrial Business Machines Corporation

IST-RAM:

In-plane spin-torque random access memory

LLG:

Landau–Lifshitz–Gilbert equation

LSMO:

La0.33Sr0.67MnO3

MFM:

Magnetic force microscopy

MOKE:

Magneto-optical Kerr effect

MR:

Magnetoresistance

MRAM:

Magnetic random access memory

MTJ:

Magnetic tunnel junction

NEC:

NEC Corporation

OOMMF:

Object Oriented Micromagnetic Framework

OST-RAM:

Orthogonal (perpendicular) spin-torque random access memory

PEEM:

Photoemission electron microscopy

PL/FL/AL:

Perpendicular magnetized layer, free layer, analyzing layer

PMA:

Perpendicular magnetic anisotropy

Py:

Permalloy (Ni81Fe19)

RAMAC:

IBM 305 RAMAC (random access method of accounting and control), first computer with a hard disk drive

RF:

Radio frequency

SEM:

Scanning electron microscopy

SEMPA:

Scanning electron microscopy with polarization analyzer

STO:

SrTiO3

STT-RAM:

Spin transfer torque magnetic random access memory

STT:

Spin transfer torque

STXM:

Scanning transmission X-ray microscopy

SW:

Spin wave

TEY:

Total electron yield

TMR:

Tunnel magnetoresistance

TW:

Transverse domain wall

VW:

Vortex domain wall

XMCD:

X-ray magnetic circular dichroism

XMCD-PEEM:

X-ray magnetic circular dichroism–photoemission electron microscopy

μ:

Domain wall mobility

μ0 :

Vacuum permeability

A:

Exchange constant

D, d:

Diameter

e:

Electron charge

Heff :

“Effective” magnetic field acting on m

Hk :

Anisotropy field

Hnucleation, Hn :

Nucleation magnetic field for domain walls

HP :

Propagation magnetic field for domain walls, pinning field

HW :

Walker breakdown field

jc, Jc :

Critical current density

K:

Magnetic anisotropy constant

Kd :

Magnetostatic energy difference between Bloch and Néel wall; demagnetizing energy

Keff :

Effective anisotropy constant

m:

Magnetization vector

MS :

Saturation magnetization

NX,Y,Z :

Demagnetizing factors

P:

Spin polarization

RT:

Room temperature

t:

Thickness

TC :

Curie temperature

u:

Effective velocity

w:

Width

α:

Damping constant

β:

Nonadiabatic

γ0 :

Gyromagnetic ratio

θ:

Out-of-plane spin-canting angle

λex, Λ:

Exchange length

λsf :

Spin-flip length

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Acknowledgments

We thank F. Büttner, A. Bisig, and C. Moutafis for help with various parts of the text and I. Berber for her support. We thank D. Hinzke and U. Nowak for permission to use Fig. 16 and D. Ravelosona for permission to use Figs. 8 and 9.

The authors would like to acknowledge the financial support by the DFG (SFB 767, SPP Graphene, SPP SpinCaT, KL1811), the Landesstiftung Baden Württemberg, the European Research Council via its Starting Independent Researcher Grant (Grant No. ERC-2007-Stg 208162) and Proof-of-Concept Grant schemes, EU RTN SPINSWITCH (MRTN-CT2006035327), the EU IP project IFOX (NMP3-LA-2010 246102), the EU STREP project MAGWIRE (FP7-ICT-2009-5 257707), the EU STREP project MoQuas (FP7-ICT-2013-10 610449), the EU ITN WALL (FP7-PEOPLE-2013-ITN 608031), the Swiss National Science Foundation, and the Graduate School of Excellence Materials Science in Mainz (MAINZ – GSC 266).

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Authors and Affiliations

  1. Institute of Physics, Johannes Gutenberg-University Mainz, 55099, Mainz, Germany

    Michael Foerster & Mathias Kläui

  2. Laboratoire SpinTec, CEA, 38054, Grenoble, France

    O. Boulle

  3. Leibniz Institute of Photonic Technology, Albert-Einstein-Straße, 07745, Jena, Germany

    S. Esefelder & R. Mattheis

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  1. Michael Foerster
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  2. O. Boulle
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  3. S. Esefelder
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  4. R. Mattheis
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  5. Mathias Kläui
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Correspondence to Michael Foerster .

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Editors and Affiliations

  1. York-Nanjing International Center of Spintronics, Nanjing University, Nanjing, China

    Yongbing Xu

  2. Institute for Molecular Engineering, University of Chicago, Chicago, Illinois, USA

    David D. Awschalom

  3. Department of Materials Science, Graduate School of Engineering, Tohoku University, Sendai, Japan

    Junsaku Nitta

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Foerster, M., Boulle, O., Esefelder, S., Mattheis, R., Kläui, M. (2016). Domain Wall Memory Device. In: Xu, Y., Awschalom, D., Nitta, J. (eds) Handbook of Spintronics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6892-5_48

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