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Handbook of Spintronics pp 585–614Cite as

Magneto-Transport Behaviors of (Ga,Mn)As Based Nano-structures and Devices

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Abstract

As a widely accepted magnetic semiconductor with an intrinsic ferromagnetism, (Ga,Mn)As has attracted much attention in the past decades, and many kinds of extraordinary spintronic functionalities have been realized based on this kind of material. However, increasing the Curie temperature (T C ) of (Ga,Mn)As above room temperature is a necessity for potential applications. In this chapter, an overview of several ways used recently to increase T C will be provided. Firstly, we will show that T C of (Ga,Mn)As can be increased to 190 K by heavy Mn doping employing low-temperature molecular-beam epitaxy and post-growth annealing. Then, we will demonstrate that T C as high as 200 K can be achieved in (Ga,Mn)As by combining a nano-patterning technique with high Mn doping and low-temperature annealing. After that, we will present the strong carrier localization effect existing in heavily Mn-doped (Ga,Mn)As films. Finally, we will mention an unconventional way to fabricate (Ga,Mn)As-based magnetic tunneling junction, in which a highest tunneling magnetoresistance ratio of 101 % could be achieved at 2 K.

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Abbreviations

AFM:

Atomic force microscope

AMR:

Anisotropic magnetoresistance

BEP:

Beam equivalent pressure

FMR:

Ferromagnetic resonance

HRXRD:

High-resolution x-ray diffraction

MBE:

Molecular-beam epitaxy

MTJs:

Magnetic tunnel junctions

PCAR:

Point contact Andreev reflection

PMMA:

Polymethyl methacrylate

PPMS:

Physical property measurement system

RHEED:

Reflection high-energy electron diffraction

RMS:

Root mean square

SEM:

Scanning electron microscopy

SQUID:

Superconducting quantum interference device

TMR:

Tunneling magnetoresistance

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Acknowledgments

We would like to thank Profs. F. H. Yang, P. Xiong, S. von Molnár, X. F. Han, and H. J. von Bardeleben and their group members for collaboration. This work is supported partly by MOST of China (Grant No. 2013CB922303) and NSFC (Grant Nos. 11127406, 11204293).

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Authors and Affiliations

  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 912, 100083, Beijing, China

    Lin Chen & Jianhua Zhao

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  1. Lin Chen
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  2. Jianhua Zhao
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Correspondence to Lin Chen .

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Editors and Affiliations

  1. York-Nanjing International Center of Spintronics, Nanjing University, Nanjing, China

    Yongbing Xu

  2. Institute for Molecular Engineering, University of Chicago, Chicago, Illinois, USA

    David D. Awschalom

  3. Department of Materials Science, Graduate School of Engineering, Tohoku University, Sendai, Japan

    Junsaku Nitta

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Chen, L., Zhao, J. (2016). Magneto-Transport Behaviors of (Ga,Mn)As Based Nano-structures and Devices. In: Xu, Y., Awschalom, D., Nitta, J. (eds) Handbook of Spintronics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6892-5_24

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