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Handbook of Spintronics pp 465–521Cite as

III–V Based Magnetic Semiconductors

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Abstract

(Ga,Mn)As and related (III,Mn)V compounds are at the forefront of spintronics research exploring the synergy of ferromagnetism with the physics and the technology of semiconductors. Over the past 20 years, the research of (Ga,Mn)As has led to a deeper understanding of previously known spintronics phenomena, to discoveries of new effects, and to demonstrations of unprecedented functionalities of experimental spintronics devices with general applicability to a wide range of magnetic materials. In this chapter we review some of the basic structural, magnetic, electronic, and optical properties of the ferromagnetic (III,Mn)V semiconductors, as well as the devices fabricated from these model spintronics materials.

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Abbreviations

AMR:

Anisotropic magnetoresistance

CB:

Coulomb blockade

DOS:

Density of states

DW:

Domain wall

FMR:

Ferromagnetic resonance

GGA:

Generalized gradient approximations

GMR:

Giant magnetoresistance

LSMR:

Linear spin-Hall magnetoresistance

LT-MBE:

Low-temperature molecular-beam epitaxy

MRAM:

Magnetic random access memory

OSOT:

Optical spin–orbit torque

OSTT:

Optical spin–transfer torque

SET:

Single-electron transistor

SHE:

Spin-Hall effect

SOT:

Spin–orbit torque

SQUID:

Superconducting quantum interference device

STM:

Scanning tunneling microscopy

STT:

Spin–transfer torque

TAMR:

Tunneling anisotropic magnetoresistance

TBA:

Tight-binding approximation

TMR:

Tunneling magnetoresistance

WB:

Walker breakdown

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Acknowledgments

This review is based on numerous helpful discussions with our colleagues. In particular we acknowledge discussions with Richard Campion, Tomasz Dietl, Kevin Edmonds, Andrew Ferguson,Tom Foxon, Bryan Gallagher, Allan MacDonald, Jan Mašek, Petr Němec, Vít Novák, Hideo Ohno, Kamil Olejník, Andrev Rushforth, Jairo Sinova, Karel Výborný, Dieter Weiss, Jorg Wunderlich, and Jan Zemen. We also acknowledge support from the ERC Advanced Grant No. 268066, from the Ministry of Education of the Czech Republic Grant No. LM2011026, and from the Czech Science Foundation Grant No. 14-37427G

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  1. Institute of Physics ASCR, v.v.i., Praha 6, Czech Republic

    T. Jungwirth

  2. School of Physics and Astronomy, University of Nottingham, Nottingham, UK

    T. Jungwirth

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  1. York-Nanjing International Center of Spintronics, Nanjing University, Nanjing, China

    Yongbing Xu

  2. Institute for Molecular Engineering, University of Chicago, Chicago, Illinois, USA

    David D. Awschalom

  3. Department of Materials Science, Graduate School of Engineering, Tohoku University, Sendai, Japan

    Junsaku Nitta

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Jungwirth, T. (2016). III–V Based Magnetic Semiconductors. In: Xu, Y., Awschalom, D., Nitta, J. (eds) Handbook of Spintronics. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6892-5_20

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