Overview
Electromigration is a phenomenon of atomic mass transport in metallization structures when a high electrical current density is applied. It can cause progressive damage to metal interconnects in microelectronics. The atomic mass transport is caused by a combination of interacting driving forces, which can generate voids at different locations. These driving forces include the momentum exchange with current carriers (electron wind), temperature gradients, thermal stress gradients, and atomic density gradient. Usually, void nucleation happens near cathode side, and hillock appears near anode side during current stressing, which indicates a biased mass diffusion from cathode to anode. This entry introduces the thermal stress migration and its role in electromigration (EM) of wafer level interconnects. Thermal stress migration (or stress atomic flux) is induced by the thermal stress gradient and is proportional to the negative stress gradient. Atoms move from the higher stress...
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Liu, Y. (2014). Thermal Stress Migration and Its Role in Electromigration of Microelectronics. In: Hetnarski, R.B. (eds) Encyclopedia of Thermal Stresses. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-2739-7_283
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DOI: https://doi.org/10.1007/978-94-007-2739-7_283
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-007-2738-0
Online ISBN: 978-94-007-2739-7
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