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Handbook of Photovoltaic Silicon pp 541–588Cite as

Defects in Crystalline Silicon: Dislocations

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Abstract

Current understanding of various properties of dislocations in Si is given comprehensively for photovoltaic applications. Dislocations cause spatial variations in the electrical and optical properties of semiconductor materials and also the degradation of various kinds of semiconductor devices. Thus, establishing knowledge on mechanical properties of dislocations and also interactions between dislocations and impurities is important from both the fundamental and practical viewpoints for development of semiconductor technology. Indeed, the knowledge is widely applied as the basis for dislocation-free crystal growth and device fabrication process in Si.

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Acknowledgment

The author expresses his gratitude to his colleagues Profs. Y. Ohno, T. Taishi, K. Kutsukake, Drs. Y. Tokumoto, M. Deura for close and long-standing collaborations on dislocation researches in Si. This chapter is dedicated to the memory of Professor Malcolm I. Heggie.

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  1. Tohoku University, Sendai, Japan

    Ichiro Yonenaga

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  1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, China

    Deren Yang

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  1. Faculty of Physics - IV. Physical Institute - Ropers group, Georg-August-University Goettingen, Goettingen, Germany

    Michael Seibt

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Yonenaga, I. (2019). Defects in Crystalline Silicon: Dislocations. In: Yang, D. (eds) Handbook of Photovoltaic Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-56472-1_24

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