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Handbook of Photovoltaic Silicon pp 463–494Cite as

Nitrogen Impurity in Crystalline Silicon

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Abstract

This chapter starts with the basic features of nitrogen including the existence of N-related defects, detection and measurements of N content, the solubility, and diffusion of N impurities in silicon materials. From the perspective of photovoltaic application, the nitrogen doping method for Czochralski silicon is then introduced, and the results about the influence of nitrogen impurity on N-O complexes, O-related defects, and mechanical properties are presented. A second focus of this chapter is toward N-related defects in directionally solidified photovoltaic multicrystalline silicon (mc-Si) materials. The existence and distribution of N-related defects, the formation, and influence of silicon nitride precipitates in mc-Si are comprehensively described. Then the results about mc-Si growth in ambient nitrogen are presented as an application to further understand the properties of nitrogen in mc-Si.

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Acknowledgments

The authors would like to thank the financial support from the National Natural Science Foundation of China (Nos. 51532007, 61721005). It was also partly supported by Key Project of Zhejiang Province (No. 2018C01034).

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials and school of Materials Science and Engineering, Zhejiang University, Hangzhou, China

    Deren Yang

  2. State Key Laboratory of Silicon Materials and school of Materials Science and Engineering, Zhejiang University, Zhejiang, Hangzhou, China

    Shuai Yuan

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  1. Shuai Yuan
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Correspondence to Shuai Yuan .

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  1. State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, China

    Deren Yang

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  1. Faculty of Physics - IV. Physical Institute - Ropers group, Georg-August-University Goettingen, Goettingen, Germany

    Michael Seibt

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Yuan, S., Yang, D. (2019). Nitrogen Impurity in Crystalline Silicon. In: Yang, D. (eds) Handbook of Photovoltaic Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-56472-1_22

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