Abstract
Oxygen belongs to the most important impurities in many types of solar silicon. Interstitial oxygen is already incorporated in a supersaturated state during crystal growth. Subsequent thermal treatment during solar cell manufacturing leads to its precipitation which degrades the lifetime of minority carriers in solar cell material and also the solar cell efficiency. Oxide precipitate nuclei are formed already during crystal cooling. A special form of oxygen precipitation is the generation of thermal donors which enhance the free carrier concentration and in this way degrade the lifetime of minority carriers. Controlling of oxygen precipitation for optimization of solar cell efficiency involves controlling of all important factors affecting the nucleation and growth of oxygen-related defects. Therefore, this chapter deals with the basic understanding of oxygen precipitation and thermal donor formation, its characterization and measurement, and its impact on solar cell material and solar cell performance. The interaction of intrinsic point defects, light elements, and dopants with oxygen and its impact on precipitation is also discussed.
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References
D. Ǻberg, B.G. Svensson, T. Hallberg, J.L. Lindström, Phys. Rev. B 58, 12944 (1998)
V. Akhmetov, G. Kissinger, W. von Ammon, Appl. Phys. Lett. 94, 092105 (2009)
L. Arnberg, M. Di Sabatino, E.J. Øvrelid, J. Cryst. Growth 360, 56 (2012)
R. Becker, W. Döring, Ann. Phys. 24, 719 (1935)
J.L. Benton, L.C. Kimerling, M. Stavola, Phy. B 116, 271 (1983)
S. Binetti, S. Pizzini, E. Leoni, R. Somaschini, A. Castaldini, A. Cavallini, J. Appl. Phys. 92, 2437 (2002)
S. Binetti, A. Le Donne, A. Sassella, Sol. Energy Mater. Sol. Cells 130, 696 (2014)
A. Borghesi, A. Piaggi, A. Sassella, A. Stella, B. Pivac, Phys. Rev. B 46, 4123 (1992)
A. Borghesi, B. Pivac, A. Sassella, A. Stella, J. Appl. Phys. 77, 4169 (1995)
A. Borghesi, A. Sassela, P. Geranzani, M. Porrini, B. Pivac, Mater. Sci. Eng. B 73, 145 (2000)
S. Cadeo, S. Pizzini, M. Acciarri, A. Cavallini, Mat. Sci. Semicond. Proc. 2, 57 (1999)
V. Cazcarra, P. Zunino, J. Appl. Phys. 51, 4206 (1980)
L. Chen, X. Yu, P. Chen, P. Wang, X. Gu, J. Lu, D. Yang, Sol. Energy Mater. Sol. Cells 95, 3148 (2011)
M. Claybourn, R.C. Newman, Appl. Phys. Lett. 52, 2139 (1988)
J. Coutinho, R. Jones, L.I. Murin, V.P. Markevich, J.L. Lindström, S. Öberg, P.R. Briddon, Phys. Rev. Lett. 87, 235501 (2001)
R. Falster, M. Cornara, D. Gambaro, M. Olmo, M. Pagani, Solid State Phenom. 57–58, 123 (1997a)
R. Falster, M. Pagani, D. Gambaro, M. Cornara, M. Olmo, G. Ferrero, P. Pichler, M. Jacob, Solid State Phenom. 57–58, 129 (1997b)
C.S. Fuller, R.A. Logan, J. Appl. Phys. 28, 1427 (1957)
J. Furukawa, H. Furuya, Jpn. J. Appl. Phys. 34, L156 (1995)
G. Gaspar, G. Coletti, M. Juel, S. Würzner, R. Søndenå, M. Di Sabatino, L. Arnberg, E.J. Øvrelid, Sol. Energy Mater. Sol. Cells 153, 31 (2016)
W. Götz, G. Pensl, W. Zulehner, Phys. Rev. B 46, 4312 (1992)
T. Hallberg, J.L. Lindström, J. Appl. Phys. 72, 5130 (1992)
C. Häßler, H.-U. Höfs, W. Koch, G. Stollwerck, A. Müller, D. Karg, G. Pensl, Mat. Sci. Eng. B71, 39 (2000)
S.M. Hu, J. Appl. Phys. 51, 5945 (1980)
Y. Hu, H. Schøn, E.J. Øvrelid, Ø. Nielsen, L. Arnberg, AIP Adv. 2, 032169 (2012)
J.M. Hwang, D. Schroder, J. Appl. Phys. 59, 2476 (1986)
K. Kaneko, K. Nakagawa, T. Onizuka, K. Sasatani, N. Kubo, M. Kida, in Proc. 16th Workshop on Crystalline Silicon Solar Cells and Modules, ed. by B. L. Sopori, NREL, (Denver, 2006), p. 2
D. Karg, G. Pensl, M. Schulz, C. Hässler, W. Koch, Phys. Stat. Sol. (B) 222, 379 (2000)
D. Karg, G. Pensl, M. Schulz, in Proc. 3rd World Conf. on Photovoltaic Energy Conversion, WCPEC-3 Organizing Committee, (Osaka, 2003), p. 1112–1115
D. Karg, H. Charifi, G. Pensl, M. Schulz, G. Hahn, in 19th Europ. Photovoltaic Solar Energy Conf.: Proc. of the Int. Conf. held in Paris, France, June 7–11 2004, vol 1, ed. by H. Winfried (WIP, München [u.a.], 2004), pp. 709–712. ISBN 3-936338-14-0
G. Kato, M. Tajima, F. Okayama, S. Tokumaru, R. Sato, H. Toyota, A. Ogura, Acta Phys. Pol. A 125, 1010 (2014)
K.F. Kelton, R. Falster, D. Gambaro, M. Olmo, M. Cornara, P.F. Wei, J. Appl. Phys. 85, 8097 (1999)
K. Kinoshita, T. Kojima, K. Onishi, Y. Ohshita, A. Ogura, Jpn. J. Appl. Phys. 58, SBBF02 (2019)
G. Kissinger, in Defects and Impurities in Silicon Materials, Lecture Notes in Physics, ed. by Y. Yoshida, G. Langouche, vol. 916, (Springer, Japan, 2015), pp. 273–341
G. Kissinger, J. Dabrowski, J. Electrochem. Soc. 155, H448 (2008)
G. Kissinger, D. Gräf, U. Lambert, H. Richter, J. Electrochem. Soc. 144, 1447 (1997)
G. Kissinger, J. Dabrowski, A. Sattler, C. Seuring, T. Müller, H. Richter, W. von Ammon, J. Electrochem. Soc. 154, H454 (2007)
G. Kissinger, D. Kot, J. Dabrowski, V. Akhmetov, A. Sattler, W. von Ammon, ECS Trans. 16(6), 97 (2008a)
G. Kissinger, J. Dabrowski, A. Sattler, T. Müller, W. von Ammon, Solid State Phenom. 131–133, 293 (2008b)
G. Kissinger, J. Dabrowski, V. Akhmetov, A. Sattler, D. Kot, W. von Ammon, Solis State Phenom. 156–158, 211 (2010)
G. Kissinger, J. Dabrowski, D. Kot, V. Akhmetov, A. Sattler, W. von Ammon, J. Electrochem. Soc. 158, H343 (2011)
G. Kissinger, D. Kot, J. Dabrowski, T. Grabolla, T. Müller, A. Sattler, Phys. Status Solidi A 214, 1700236 (2017)
D. Kot, T. Mchedlidze, G. Kissinger, W. von Ammon, ECS J. Solid State Sci. Technol. 2, P9 (2013)
D. Kot, G. Kissinger, M.A. Schubert, A. Sattler, ECS J. Solid State Sci. Technol. 3(11), P370 (2014)
D. Kot, G. Kissinger, M.A. Schubert, S. Marschmeyer, G. Schwalb, A. Sattler, Phys. Stat. Sol. (C) 14, 1700161 (2017)
D. Kot, G. Kissinger, J. Dabrowski, A. Sattler, ECS J. Solid State Sci. Technol. 7, P707 (2018)
F. Kroupa, Czechoslov. J. Phys. 10B, 284 (1960)
A. Le Donne, S. Binetti, V. Folegatti, G. Coletti, Appl. Phys. Lett. 109, 033907 (2016)
S.-T. Lee, P. Fellinger, S. Chen, J. Appl. Phys. 63, 1924 (1988)
J. Lu, G. Rozgonyi, J. Rand, R. Jonczyk, J. Cryst. Growth 269, 599 (2004)
V.P. Markevich, M. Vaqueiro-Contreras, S.B. Lastovskii, L.I. Murin, M.P. Halsall, A.R. Peaker, J. Appl. Phys. 124, 225703 (2018)
S.A. McQuaid, B.K. Johnson, D. Gambaro, R. Falster, M.J. Ashwin, J.H. Tucker, J. Appl. Phys. 86, 1878 (1999)
J.C. Mikkelsen Jr., Mater. Res. Soc. Symp. Proc. 59, 19 (1986)
M. Miyagi, K. Wada, J. Osaka, N. Inoue, Appl. Phys. Lett. 40, 719 (1982)
Y. Miyamura, H. Harada, K. Jiptner, S. Nakano, B. Gao, K. Kakimoto, K. Nakamura, Y. Ohshita, A. Ogura, S. Sugawara, T. Sekiguchi, Appl. Phys. Express 8, 062301 (2015)
Y. Miyamura, H. Harada, S. Nakano, S. Nishizawa, K. Kakimoto, J. Cryst. Growth 489, 1 (2018)
H.J. Möller, L. Long, M. Werner, D. Yang, Phys. Stat. Sol. (A) 171, 175 (1999)
P.M. Mooney, L.J. Cheng, M. Süli, J.D. Gerson, J.W. Corbett, Phys. Rev. B 15, 3836 (1977)
Y. Murakami, Y. Satoh, H. Furuja, T. Shingyouji, J. Appl. Phys. 84, 3175 (1998)
L.I. Murin, J.L. Lindström, B.G. Svensson, V.P. Markevich, A.R. Peaker, C.A. Londos, Solid State Phenom. 108–109, 267 (2005)
J.D. Murphy, P.R. Wilshaw, B.C. Pygall, S. Senkader, J. Appl. Phys. 100, 103531 (2006)
J.D. Murphy, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster, J. Appl. Phys. 110, 053713 (2011)
J.D. Murphy, K. Bothe, V.V. Voronkov, R.J. Falster, Appl. Phys. Lett. 102, 042105 (2013)
J.D. Murphy, R.E. McGuire, K. Bothe, V.V. Voronkov, R.J. Falster, Sol. Energy Mater. Sol. Cells 120, 402 (2014)
J.D. Murphy, M. Al-Amin, K. Bothe, M. Olmo, V.V. Voronkov, R.J. Falster, J. Appl. Phys. 118, 215706 (2015)
F.R.N. Nabarro, H.H. Wills, Proc. Roy. Soc. A 175, 519 (1940)
K. Nakai, Y. Inoue, H. Yokota, A. Ikari, J. Takahashi, A. Tachikawa, K. Kitahara, Y. Ohta, W. Ohashi, J. Appl. Phys. 89, 4301 (2001)
R.C. Newman, J.H. Tucker, A.R. Brown, S.A. McQuaid, J. Appl. Phys. 70, 3061 (1991)
H. Ono, T. Ishizuka, C. Kato, K. Arafune, Y. Ohshita, A. Ogura, Jpn. J. Appl. Phys. 49, 110202 (2010)
G. Pensl, M. Schulz, K. Hölzlein, W. Bergholz, J.L. Hutchison, Appl. Phys. A 48, 49 (1989)
M. Pesola, Y.J. Lee, J. von Boehm, M. Kaukonen, R.M. Nieminen, Phys. Rev. Lett. 84, 5343 (2000)
B. Pivac, A. Sassella, A. Borghesi, Mater. Sci. Eng. B 36, 53 (1996)
S. Pizzini, M. Acciarri, E. Leoni, A. Le Donne, Phys. Stat. Sol. (B) 222, 141 (2000)
V. Quemener, B. Raeissi, F. Herklotz, L.I. Murin, E.V. Monakhov, B.G. Svensson, Phys. Stat. Sol. B 251, 2197 (2014)
V. Quemener, B. Raeissi, F. Herklotz, L.I. Murin, E.V. Monakhov, B.G. Svensson, J. Appl. Phys. 118, 135703 (2015)
M. Ramamoorthy, S.T. Pantelides, Solid State Commun. 106, 243 (1998)
A. Richter, S.W. Glunz, F. Werner, J. Schmidt, Phys. Rev. B 86, 165202 (2012)
A. Sassella, A. Borghesi, P. Garanzani, G. Borionetti, Appl. Phys. Lett. 75, 1131 (1999)
K. Schmalz, P. Gaworzewski, Phys. Stat. Sol. (A) 64, 151 (1981)
J. Schmidt, K. Bothe, Phys. Rev. B 69, 024107 (2004)
F. Shimura, Semicond. Semimet. 42, 621 (1966)
F. Shimura, J. Appl. Phys. 59, 3251 (1986)
E. Simoen, Y.L. Huang, Y. Ma, J. Lauwaert, P. Clauws, J.M. Rafi, A. Ulyashin, C. Claeys, J. Electrochem. Soc. 156, H434 (2009)
L.C. Snyder, J.W. Corbett, P. Deak, R. Wu, Mat. Res. Soc. Proc. 104, 179 (1988)
H.J. Stein, S. Hahn, J. Appl. Phys. 75, 3477 (1994)
H.J. Stein, S.K. Hahn, S.C. Shatas, J. Appl. Phys. 59, 3495 (1986)
K. Sueoka, M. Akatsuka, M. Yonemura, T. Ono, E. Asayama, H. Katahama, J. Electrochem. Soc. 147, 756 (2000)
Q. Sun, K.H. Yao, H.C. Gatos, J. Lagowski, J. Appl. Phys. 71, 3760 (1992)
D. Suwito, U. Jager, J. Benick, S. Janz, M. Hermle, S.W. Glunz, IEEE Trans. Electron. Devices 57, 2032 (2010)
B.G. Svensson, J.L. Lindström, Phys. Stat. Sol. (A) 95, 537 (1986)
R. Swaroop, N. Kim, W. Lin, M. Bullis, L. Shive, A. Rice, E. Castel, M. Christ, Solid State Technol. 3, 85–89 (1987)
T. Tachibana, K. Nakamura, A. Ogura, Y. Ohshita, T. Shimoda, I. Masada, E. Nishijima, AIP Adv. 7, 045111 (2017)
M. Tajima, H. Takeno, T. Abe, Mat. Sci. Forum 83–87, 1327 (1991)
M. Tajima, M. Warashina, H. Takeno, T. Abe, Appl. Phys. Lett. 65, 222 (1994)
M. Tajima, Y. Iwata, F. Okayama, H. Toyota, H. Onodera, T. Sekiguchi, J. Appl. Phys. 111, 113523 (2012)
H. Takeno, Y. Hayamizu, K. Miki, J. Appl. Phys. 84, 3113 (1998)
Y. Tokuda, N. Kobayashi, A. Usami, Y. Inoue, M. Imura, J. Appl. Phys. 66, 3651 (1989)
Y. Tokuda, T. Shimokata, Y. Inoue, A. Usami, M. Imura, Semicond. Sci. Technol. 6, 66 (1991)
M. Tomassini, J. Veirman, R. Varache, E. Letty, S. Dubois, Y. Yu, Ø. Nielsen, J. Appl. Phys. 119, 084508 (2016)
K. Torigoe, T. Ono, J. Appl. Phys. 121, 215103 (2017)
V.J.B. Torres, J. Coutinho, R. Jones, M. Barroso, S. Öberg, P.R. Briddon, Physica B 376–377, 109 (2006)
L. Tsetseries, S. Wang, S.T. Pantelides, Appl. Phys. Lett. 88, 051916 (2006)
J. Vanhellemont, J. Appl. Phys. 78, 4297 (1995)
J. Vanhellemont, E. Simoen, A. Kaniava, M. Libezny, C. Claeys, J. Appl. Phys. 77, 5669 (1995)
J. Vanhellemont, K. Nakamura, E. Kamiyama, K. Sueoka, in Defects and Impurities in Silicon Materials, Lecture Notes in Physics, vol.916, ed. by Y. Yoshida G. Langouche (Springer Tokyo, 2015), pp. 181–240
V.V. Voronkov, J. Cryst. Growth 59, 625 (1982)
V.V. Voronkov, R. Falster, J. Appl. Phys. 91, 5802 (2002)
V.V. Voronkov, G.I. Voronkova, A.V. Batunina, R. Falster, V.N. Golovina, A.S. Guliaeva, N.B. Tiurina, M.G. Milvidski, J. Electrochem. Soc. 147, 3899 (2000)
V.V. Voronkov, G.I. Voronkova, A.V. Batunina, R. Falster, V.N. Golovina, A.S. Guliaeva, N.B. Tiurina, M.G. Milvidski, Solid State Phenom. 131–133, 387 (2008)
K. Wada, N. Inoue, Electrochem. Soc. Proc. 86–4, 778 (1986)
P. Wagner, J. Hage, Appl. Phys. A 49, 123 (1989)
W. Wijaranakula, Appl. Phys. Lett. 59, 1608 (1991)
D. Wruck, P. Gaworzewski, Phys. Stat. Sol. (A) 56, 557 (1979)
Z. Xi, J. Tang, H. Deng, D. Yang, D. Que, Sol. Energy Mater. Sol. Cells 91, 1688 (2007)
D. Yang, H.J. Möller, Sol. Energy Mater. Sol. Cells 72, 541 (2002)
X. Yu, D. Yang, X. Ma, J. Yang, L. Li, D. Que, J. Appl. Phys. 92, 188 (2002)
S. Zhang, M. Juel, E.J. Øvrelid, G. Tranell, J. Cryst. Growth 411, 63 (2015)
J. Zhao, A. Wang, M.A. Green, Prog. Photovolt. Res. Appl. 7, 471 (1999)
M. Zschorsch, R. Hölzl, H. Rüfer, H.J. Möller, W. von Ammon, Solid State Phenom. 95–96, 71 (2004)
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Kissinger, G. (2019). Oxygen Impurity in Crystalline Silicon. In: Yang, D. (eds) Handbook of Photovoltaic Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-56472-1_20
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